- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄359025 > M29F032D70N6T (意法半導體) JFET-Input Low Power High Drive Quad Operational Amplifier 20-LCCC -55 to 125 PDF資料下載
參數(shù)資料
| 型號： | M29F032D70N6T |
| 廠商： | 意法半導體 |
| 英文描述： | JFET-Input Low Power High Drive Quad Operational Amplifier 20-LCCC -55 to 125 |
| 中文描述： | 32兆位4Mb的× 8，統(tǒng)一座5V電源快閃記憶體 |
| 文件頁數(shù)： | 27/35頁 |
| 文件大?。?/td> | 224K |
| 代理商： | M29F032D70N6T |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁當前第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁
27/35
M29F032D
Table 19. CFI Query System Interface Information
Note: 1. Not supported in the CFI
Address
Data
Description
Value
1Bh
45h
V
CC
Logic Supply Minimum Program/Erase voltage
bit 7 to 4
BCD value in volts
bit 3 to 0
BCD value in 100 mV
4.5V
1Ch
55h
V
CC
Logic Supply Maximum Program/Erase voltage
bit 7 to 4
BCD value in volts
bit 3 to 0
BCD value in 100 mV
5.5V
1Dh
00h
V
PP
[Programming] Supply Minimum Program/Erase voltage
00h not supported
NA
1Eh
00h
V
PP
[Programming] Supply Maximum Program/Erase voltage
00h not supported
NA
1Fh
04h
Typical timeout per single byte program = 2
n
μs
16μs
20h
00h
Typical timeout for minimum size write buffer program = 2
n
μs
NA
21h
0Ah
Typical timeout per individual block erase = 2
n
ms
1s
22h
00h
Typical timeout for full chip erase = 2
n
ms
see note (1)
23h
04h
Maximum timeout for byte program = 2
n
times typical
256μs
24h
00h
Maximum timeout for write buffer program = 2
n
times typical
NA
25h
03h
Maximum timeout per individual block erase = 2
n
times typical
8s
26h
00h
Maximum timeout for chip erase = 2
n
times typical
see note (1)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M29F040-70XK1R | 4 Mbit 512Kb x8, Uniform Block Single Supply Flash Memory |
| M29F040-70XN3R | 4 Mbit 512Kb x8, Uniform Block Single Supply Flash Memory |
| M29F040-90XN3R | 4 Mbit 512Kb x8, Uniform Block Single Supply Flash Memory |
| M29F040-120XN3R | 4 Mbit 512Kb x8, Uniform Block Single Supply Flash Memory |
| M29F040-90XK3R | 4 Mbit 512Kb x8, Uniform Block Single Supply Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M29F040 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:4 Mbit 512Kb x8, Uniform Block Single Supply Flash Memory |
| M29F040-120K1R | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:4 Mbit 512Kb x8, Uniform Block Single Supply Flash Memory |
| M29F040-120K1TR | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:4 Mbit 512Kb x8, Uniform Block Single Supply Flash Memory |
| M29F040-120K3R | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:4 Mbit 512Kb x8, Uniform Block Single Supply Flash Memory |
| M29F040-120K3TR | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:4 Mbit 512Kb x8, Uniform Block Single Supply Flash Memory |
發(fā)布緊急采購，3分鐘左右您將得到回復。