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參數(shù)資料
| 型號(hào)： | M29F040-150XN1TR |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | Low-Noise High-Speed JFET-Input Operational Amplifier 8-PDIP |
| 中文描述： | 4兆位512KB的× 8，統(tǒng)一座單電源閃存 |
| 文件頁數(shù)： | 2/31頁 |
| 文件大小： | 232K |
| 代理商： | M29F040-150XN1TR |
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A1
A2
A0
DQ0
A7
A6
A5
A4
A3
A13
A14
A17
W
VCC
A10
E
A8
A9
DQ7
DQ6
A11
G
DQ5
DQ4
DQ1
DQ2
DQ3
VSS
A16
A15
A12
A18
AI01379
M29F040
(Normal)
8
9
1
16
17
24
25
32
Figure 2B. TSOP Pin Connections
AI01378
A
A13
A8
A9
A11
G
A10
E
D
17
A1
A0
DQ0
D
D
D
D
A7
A6
A5
A4
A3
A2
9
W
1
A
DQ7
A
A14
32
A
V
M29F040
A
D
25
V
Figure 2A. LCC Pin Connections
A1
A2
A0
DQ0
A7
A6
A5
A4
A3
A13
A14
A17
W
VCC
A10
A8
A9
DQ7
DQ6
A11
G
E
DQ5
DQ4
DQ1
DQ2
DQ3
VSS
A16
A15
A12
A18
AI01174B
M29F040
(Reverse)
8
9
1
16
17
24
25
32
Figure 2C. TSOP Reverse Pin Connections
DESCRIPTION
The M29F040 is a non-volatile memory that may
be erased electrically at the block level, and pro-
grammed Byte-by-Byte.
The interface is directly compatible with most mi-
croprocessors. PLCC32 and TSOP32 (8 x 20mm)
packages are available. Both normal and reverse
pin outs are available for the TSOP32 package.
Organisation
The Flash Memory organisation is 512K x8 bits with
Address lines A0-A18 and Data Inputs/Outputs
DQ0-DQ7. Memory control is provided by Chip
Enable, Output Enable and Write Enable Inputs.
Erase and Program are performed through the
internal Program/Erase Controller (P/E.C.).
Data Outputs bits DQ7 and DQ6 provide polling or
toggle signals during Automatic Program or Erase
to indicate the Ready/Busy state of the internal
Program/Erase Controller.
Memory Blocks
Erasure of the memory is in blocks. There are 8
uniform blocks of 64 Kbytes each in the memory
address space. Each block can be programmed
and erased over 100,000 cycles. Each uniform
block may separately be protected and unpro-
2/31
M29F040
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M29F040-150XN3R | Low-Noise High-Speed JFET-Input Operational Amplifier 8-PDIP |
| M29F040-150XN3TR | 4 Mbit 512Kb x8, Uniform Block Single Supply Flash Memory |
| M29F040-150XN5R | 4 Mbit 512Kb x8, Uniform Block Single Supply Flash Memory |
| M29F040-150XN6R | Excalibur Low-Noise High-Speed JFET-Input Operational Amplifier 8-SOIC |
| M29F040-150XN6TR | 4 Mbit 512Kb x8, Uniform Block Single Supply Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M29F040-150XN3R | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:4 Mbit 512Kb x8, Uniform Block Single Supply Flash Memory |
| M29F040-150XN3TR | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:4 Mbit 512Kb x8, Uniform Block Single Supply Flash Memory |
| M29F040-150XN5R | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:4 Mbit 512Kb x8, Uniform Block Single Supply Flash Memory |
| M29F040-150XN5TR | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:4 Mbit 512Kb x8, Uniform Block Single Supply Flash Memory |
| M29F040-150XN6R | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:4 Mbit 512Kb x8, Uniform Block Single Supply Flash Memory |
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