- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄359029 > M29F200T-120M6TR (意法半導(dǎo)體) 2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory PDF資料下載
參數(shù)資料
| 型號(hào)： | M29F200T-120M6TR |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory |
| 中文描述： | 2兆位的256Kb x8或128KB的x16插槽，啟動(dòng)座單電源閃存 |
| 文件頁數(shù)： | 4/22頁 |
| 文件大小： | 146K |
| 代理商： | M29F200T-120M6TR |
M29F200BT, M29F200BB
4/22
Table 3A. M29F200BT Block Addresses
Size
(Kbytes)
(x8)
16
3C000h-3FFFFh
8
3A000h-3BFFFh
8
38000h-39FFFh
32
30000h-37FFFh
64
20000h-2FFFFh
64
10000h-1FFFFh
64
00000h-0FFFFh
Address Range
Address Range
(x16)
1E000h-1FFFFh
1D000h-1DFFFh
1C000h-1CFFFh
18000h-1BFFFh
10000h-17FFFh
08000h-0FFFFh
00000h-07FFFh
Reset/Block Temporary Unprotect (RP).
The Re-
set/Block Temporary Unprotect pin can be used to
apply a Hardware Reset to the memory or to tem-
porarily unprotect all Blocks that have been pro-
tected.
A Hardware Reset is achieved by holding Reset/
Block Temporary Unprotect Low, V
IL
, for at least
t
PLPX
. After Reset/Blocktemporary unprotect goes
High, V
IH
, the memory will be ready for Bus Read
and Bus Write operations after t
PHEL
or t
RHEL
,
whichever occurs last. See the Ready/Busy Out-
put section, Table 14 and Figure 10, Reset/Tem-
porary Unprotect AC Characteristics for more
details.
Holding RP at V
ID
will temporarily unprotect the
protected Blocks in the memory. Program and
Erase operations on all blocks will be possible.
The transition from V
IH
to V
ID
must be slower than
t
PHPHH
.
Ready/Busy Output (RB).
The Ready/Busy pin
is anopen-drain output that can beused to identify
when the memory array can be read. Ready/Busy
is high-impedanceduring Read mode, Auto Select
mode and Erase Suspend mode.
After a Hardware Reset, Bus Read and Bus Write
operations cannot begin until Ready/Busy be-
comes high-impedance. See Table 14 and Figure
10, Reset/Temporary Unprotect AC Characteris-
tics.
During Program or Erase operations Ready/Busy
is Low, V
OL
. Ready/Busy will remain Low during
Table 3B. M29F200BB Block Addresses
Size
(Kbytes)
(x8)
64
30000h-3FFFFh
64
20000h-2FFFFh
64
10000h-1FFFFh
32
08000h-0FFFFh
8
06000h-07FFFh
8
04000h-05FFFh
16
00000h-03FFFh
Address Range
Address Range
(x16)
18000h-1FFFFh
10000h-17FFFh
08000h-0FFFFh
04000h-07FFFh
03000h-03FFFh
02000h-02FFFh
00000h-01FFFh
Read/Reset commands or Hardware Resets until
the memory is ready to enter Read mode.
The use of an open-drain output allows the Ready/
Busy pins from several memories to be connected
to a single pull-up resistor. ALow will then indicate
that one, or more, of the memories is busy.
Byte/WordOrganizationSelect (BYTE).
The Byte/
Word Organization Select pin is used to switch be-
tween the 8-bit and 16-bit Bus modes of the mem-
ory. When Byte/Word Organization Select is Low,
V
IL
, the memory is in 8-bit mode, when it is High,
V
IH
, the memory is in 16-bit mode.
V
CC
Supply Voltage.
The V
CC
Supply Voltage
supplies the power for all operations (Read, Pro-
gram, Erase etc.).
The Command Interface is disabled when the V
CC
Supply Voltage is less than the Lockout Voltage,
V
LKO
. Thisprevents Bus Write operationsfrom ac-
cidentally damaging the data during power up,
power down and power surges. If the Program/
Erase Controller is programming or erasing during
this time then the operationaborts and the memo-
ry contents being altered will be invalid.
A 0.1
μ
F capacitor should be connected between
the V
CC
Supply Voltage pin and the V
SS
Ground
pin to decouple the current surges from the power
supply. The PCB track widthsmust be sufficient to
carry the currents required during program and
erase operations, I
CC4
.
Vss Ground.
The V
SS
Ground is the reference
for all voltage measurements.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M29F200T-120M6R | 2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory |
| M29F200T-120M3TR | 2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory |
| M29F200T | 2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory |
| M29F200BT90N6T | 2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory |
| M29F200BT45M6T | Single Bus Buffer Gate With 3-State Output 5-SC70 -40 to 85 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M29F200T-70XM1 | 功能描述:電可擦除可編程只讀存儲(chǔ)器 256Kx8 or 128Kx16 70 RoHS:否 制造商:Atmel 存儲(chǔ)容量:2 Kbit 組織:256 B x 8 數(shù)據(jù)保留:100 yr 最大時(shí)鐘頻率:1000 KHz 最大工作電流:6 uA 工作電源電壓:1.7 V to 5.5 V 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 |
| M29F200T-70XN1 | 功能描述:閃存 256Kx8 or 128Kx16 70 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| M29F200T-90M1 | 功能描述:電可擦除可編程只讀存儲(chǔ)器 256Kx8 or 128Kx16 90 RoHS:否 制造商:Atmel 存儲(chǔ)容量:2 Kbit 組織:256 B x 8 數(shù)據(jù)保留:100 yr 最大時(shí)鐘頻率:1000 KHz 最大工作電流:6 uA 工作電源電壓:1.7 V to 5.5 V 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 |
| M29F200T-90N1 | 功能描述:閃存 RO 511-M29F200BT70N 256KX8 OR 128KX16 90 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| M29F400B-90N1 | 功能描述:閃存 512Kx8 or 256Kx16 90 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。