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參數(shù)資料
| 型號： | M29F200BT90N6T |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory |
| 中文描述： | 2兆位的256Kb x8或128KB的x16插槽，啟動座單電源閃存 |
| 文件頁數(shù)： | 1/22頁 |
| 文件大?。?/td> | 146K |
| 代理商： | M29F200BT90N6T |
1/22
PRELIMINARY DATA
October 1999
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.
M29F200BT
M29F200BB
2 Mbit (256Kb x8 or 128Kb x16, Boot Block)
Single Supply Flash Memory
I
SINGLE 5V
±
10% SUPPLY VOLTAGE for
PROGRAM, ERASE and READ OPERATIONS
I
ACCESS TIME: 45ns
I
PROGRAMMING TIME
– 8
μ
s per Byte/Word typical
I
7 MEMORY BLOCKS
– 1 Boot Block (Top or Bottom Location)
– 2 Parameter and 4 Main Blocks
I
PROGRAM/ERASE CONTROLLER
– Embedded Byte/Word Program algorithm
– Embedded Multi-Block/Chip Erase algorithm
– Status Register Polling and Toggle Bits
– Ready/Busy Output Pin
I
ERASE SUSPEND and RESUME MODES
– Read and Program another Block during
Erase Suspend
I
UNLOCK BYPASS PROGRAM COMMAND
– Faster Production/Batch Programming
I
TEMPORARY BLOCK UNPROTECTION
MODE
I
LOW POWER CONSUMPTION
– Standby and Automatic Standby
I
100,000 PROGRAM/ERASE CYCLES per
BLOCK
I
20 YEARS DATA RETENTION
– Defectivity below 1 ppm/year
I
ELECTRONIC SIGNATURE
– Manufacturer Code: 0020h
– M29F200BT Device Code: 00D3h
– M29F200BB Device Code: 00D4h
44
1
TSOP48 (N)
12 x 20mm
SO44 (M)
Figure 1. Logic Diagram
AI02912
17
A0-A16
W
DQ0-DQ14
VCC
M29F200BT
M29F200BB
E
VSS
15
G
RP
DQ15A–1
BYTE
RB
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