參數(shù)資料
    型號(hào): M29F200T-55N1R
    廠商: 意法半導(dǎo)體
    英文描述: 2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory
    中文描述: 2兆位的256Kb x8或128KB的x16插槽,啟動(dòng)座單電源閃存
    文件頁數(shù): 5/22頁
    文件大小: 146K
    代理商: M29F200T-55N1R
    5/22
    M29F200BT, M29F200BB
    Table 4A. Bus Operations, BYTE = V
    IL
    Note: X = V
    IL
    or V
    IH
    .
    Table 4B. Bus Operations, BYTE = V
    IH
    Note: X = V
    IL
    or V
    IH
    .
    Operation
    E
    G
    W
    Address Inputs
    DQ15A–1, A0-A16
    Data Inputs/Outputs
    DQ14-DQ8
    DQ7-DQ0
    Bus Read
    V
    IL
    V
    IL
    V
    IH
    Cell Address
    Hi-Z
    Data Output
    Bus Write
    V
    IL
    V
    IH
    V
    IL
    Command Address
    Hi-Z
    Data Input
    Output Disable
    X
    V
    IH
    V
    IH
    X
    Hi-Z
    Hi-Z
    Standby
    V
    IH
    X
    X
    X
    Hi-Z
    Hi-Z
    Read Manufacturer
    Code
    V
    IL
    V
    IL
    V
    IH
    A0 = V
    IL
    , A1 = V
    IL
    , A9 = V
    ID
    ,
    Others V
    IL
    or V
    IH
    Hi-Z
    20h
    Read Device Code
    V
    IL
    V
    IL
    V
    IH
    A0 = V
    IH
    , A1 = V
    IL
    , A9 = V
    ID
    ,
    Others V
    IL
    or V
    IH
    Hi-Z
    D3h (M29F200BT)
    D4h (M29F200BB)
    Operation
    E
    G
    W
    Address Inputs
    A0-A16
    Data Inputs/Outputs
    DQ15A–1, DQ14-DQ0
    Bus Read
    V
    IL
    V
    IL
    V
    IH
    Cell Address
    Data Output
    Bus Write
    V
    IL
    V
    IH
    V
    IL
    Command Address
    Data Input
    Output Disable
    X
    V
    IH
    V
    IH
    X
    Hi-Z
    Standby
    V
    IH
    X
    X
    X
    Hi-Z
    Read Manufacturer
    Code
    V
    IL
    V
    IL
    V
    IH
    A0 = V
    IL
    , A1 = V
    IL
    , A9 = V
    ID
    ,
    Others V
    IL
    or V
    IH
    0020h
    Read Device Code
    V
    IL
    V
    IL
    V
    IH
    A0 = V
    IH
    , A1 = V
    IL
    , A9 = V
    ID
    ,
    Others V
    IL
    or V
    IH
    00D3h (M29F200BT)
    00D4h (M29F200BB)
    BUS OPERATIONS
    There are five standard busoperations that control
    the device. These are Bus Read, Bus Write, Out-
    put Disable, Standby and Automatic Standby. See
    Tables 4A and 4B, Bus Operations, for a summa-
    ry. Typically glitches of less than 5ns on Chip En-
    able or Write Enable are ignored by the memory
    and do not affect bus operations.
    Bus Read.
    Bus Read operations read from the
    memory cells, or specific registers in the Com-
    mand Interface. A valid Bus Read operation in-
    volves setting the desired address on the Address
    Inputs, applying a Low signal, V
    IL
    , to Chip Enable
    and Output Enable and keeping Write Enable
    High, V
    IH
    . The Data Inputs/Outputs will output the
    value, see Figure 7, Read Mode AC Waveforms,
    and Table 11, Read AC Characteristics, for details
    of when the output becomes valid.
    Bus Write.
    Bus Write operations write to the
    Command Interface. A valid Bus Write operation
    begins by setting the desired address on the Ad-
    dress Inputs. The Address Inputs are latched by
    the Command Interface on the falling edge of Chip
    Enable or Write Enable, whichever occurs last.
    The Data Inputs/Outputs are latched by the Com-
    mand Interface on the rising edge of Chip Enable
    or WriteEnable, whichever occurs first.OutputEn-
    able must remain High, V
    IH
    , during the whole Bus
    Write operation. See Figures 8 and 9, Write AC
    Waveforms, and Tables 12 and 13, Write AC
    Characteristics, for details of the timing require-
    ments.
    Output Disable.
    The Data Inputs/Outputs are in
    the high impedance state when Output Enable is
    High, V
    IH
    .
    相關(guān)PDF資料
    PDF描述
    M29F200T-55N1TR 2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory
    M29F200T-55N3R 2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory
    M29F200T-55N3TR 2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory
    M29F200T-120M1TR 2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory
    M29F200T-120M3R 2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory
    相關(guān)代理商/技術(shù)參數(shù)
    參數(shù)描述
    M29F200T-70XM1 功能描述:電可擦除可編程只讀存儲(chǔ)器 256Kx8 or 128Kx16 70 RoHS:否 制造商:Atmel 存儲(chǔ)容量:2 Kbit 組織:256 B x 8 數(shù)據(jù)保留:100 yr 最大時(shí)鐘頻率:1000 KHz 最大工作電流:6 uA 工作電源電壓:1.7 V to 5.5 V 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8
    M29F200T-70XN1 功能描述:閃存 256Kx8 or 128Kx16 70 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
    M29F200T-90M1 功能描述:電可擦除可編程只讀存儲(chǔ)器 256Kx8 or 128Kx16 90 RoHS:否 制造商:Atmel 存儲(chǔ)容量:2 Kbit 組織:256 B x 8 數(shù)據(jù)保留:100 yr 最大時(shí)鐘頻率:1000 KHz 最大工作電流:6 uA 工作電源電壓:1.7 V to 5.5 V 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8
    M29F200T-90N1 功能描述:閃存 RO 511-M29F200BT70N 256KX8 OR 128KX16 90 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
    M29F400B-90N1 功能描述:閃存 512Kx8 or 256Kx16 90 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel