參數(shù)資料
型號: M29F400FB5AN6F2
元件分類: PROM
英文描述: 256K X 16 FLASH 5V PROM, 55 ns, PDSO48
封裝: 12 X 20 MM, ROHS COMPLIANT, PLASTIC, TSOP1-48
文件頁數(shù): 26/65頁
文件大?。?/td> 1669K
代理商: M29F400FB5AN6F2
Command Interface
M29FxxxFT, M29FxxxFB
32/65
Table 8.
Program/Erase Times and Program/Erase Endurance Cycles, M29F400F
Typical values are measured at room temperature and nominal voltages; typical and maximum values are samples, not 100%
tested.
Chip Erase, Program, and Chip Program parameters: Maximum value measured at worst case conditions for both temperature
and VCC after 100,000 program/erase cycles.
Block Erase and Erase Suspend Latency parameter: Maximum value measured at worst case conditions for both temperature
and VCC.
Table 9.
Program/Erase Times and Program/Erase Endurance Cycles, M29F200F
Typical values are measured at room temperature and nominal voltages; typical and maximum values are samples, not 100%
tested.
Chip Erase, Program, and Chip Program parameters: Maximum value measured at worst case conditions for both temperature
and VCC after 100,000 program/erase cycles.
Block Erase and Erase Suspend Latency parameter: Maximum value measured at worst case conditions for both temperature
and VCC.
Parameter
Min
Typical
Max
Unit
Chip Erase
6
30
s
Block Erase (64 KBytes)
0.8
6
s
Erase Suspend Latency Time
20
25
μs
Program (Byte or Word)
11
200
μs
Chip Program (Byte by Byte)
6
s
Chip Program (Word by Word)
3
15
s
Program/Erase Cycles (per Block)
100,000
cycles
Data Retention
20
years
Parameter
Min
Typical
Max
Unit
Chip Erase
3
15
s
Block Erase (64 KBytes)
0.8
6
s
Erase Suspend Latency Time
20
25
μs
Program (Byte or Word)
11
200
μs
Chip Program (Byte by Byte)
4
s
Chip Program (Word by Word)
2
8
s
Program/Erase Cycles (per Block)
100,000
cycles
Data Retention
20
years
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