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參數(shù)資料
| 型號： | M29W004BT55N6T |
| 廠商： | 意法半導體 |
| 英文描述： | 4 Mbit 512Kb x8, Boot Block Low Voltage Single Supply Flash Memory |
| 中文描述： | 4兆位512KB的× 8，啟動塊低壓單電源閃存 |
| 文件頁數(shù)： | 2/30頁 |
| 文件大小： | 222K |
| 代理商： | M29W004BT55N6T |
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VSS
E
A0
DQ1
DQ0
DQ2
A7
A6
A1
A4
A3
A2
A11
A9
A8
W
RP
A17
VSS
A14
A13
A15
DQ7
DQ6
A16
G
NC
NC
A10
DQ5
DQ4
DQ3
NC
VCC
VCC
RB
A18
NC
AI02064
M29W004T
M29W004B
10
11
1
20
21
30
31
40
A12
A5
Figure 2. TSOP Pin Connections
Warning:
NC = Not Connected.
the application. Each block can be programmed
and erased over 100,000 cycles.
Instructions for Read/Reset, Auto Select for read-
ing the Electronic Signature or Block Protection
status, Programming, Block and Chip Erase, Erase
Suspend and Resume are written to the device in
cycles of commands to a Command Interface using
standard microprocessor write timings.
The device is offered in TSOP40 (10 x 20mm)
package.
Organisation
The M29W004 is organised as 512K x8. The mem-
ory uses the address inputs A0-A18 and the Data
Input/Outputs DQ0-DQ7. Memory control is pro-
vided by Chip Enable E, Output Enable G and Write
Enable W inputs.
A Reset/Block Temporary Unprotection RP tri-level
input provides a hardware reset when pulled Low,
and when held High (at V
ID
) temporarily unprotects
blocks previously protected allowing them to be
programed and erased. Erase and Program opera-
tions are controlled by an internal Program/Erase
Controller (P/E.C.). Status Register data output on
DQ7 provides a Data Polling signal, and DQ6 and
DQ2 provide Toggle signals to indicate the state of
the P/E.C operations. A Ready/Busy RB output
indicates the completion of the internal algorithms.
DESCRIPTION
(Cont’d)
Symbol
Parameter
Value
Unit
T
A
Ambient Operating Temperature
(3)
–40 to 85
°
C
T
BIAS
Temperature Under Bias
–50 to 125
°
C
T
STG
V
IO (2)
Storage Temperature
–65 to 150
°
C
Input or Output Voltages
–0.6 to 5
V
V
CC
Supply Voltage
–0.6 to 5
V
V
(A9, E, G, RP) (2)
A9, E, G, RP Voltage
–0.6 to 13.5
V
Notes:
1. Except for the rating "Operating Temperature Range", stresses above those listed in the Table "Absolute Maximum Ratings"
may cause permanent damage to the device. These are stress ratings only and operation of the device at these or any other
conditions above those indicated in the Operating sections of this specification is not implied. Exposure to Absolute Maximum
Rating conditions for extended periods may affect device reliability. Refer also to the STMicroelectronics SURE Program and other
relevant quality documents.
2. Minimum Voltage may undershoot to –2V during transition and for less than 20ns.
3. Depends on range.
Table 2. Absolute Maximum Ratings
(1)
A0-A18
Address Inputs
DQ0-DQ7
Data Input/Outputs, Command Inputs
E
Chip Enable
G
Output Enable
W
Write Enable
RP
Reset / Block Temporary Unprotect
RB
Ready/Busy Output
V
CC
Supply Voltage
V
SS
Ground
Table 1. Signal Names
2/30
M29W004T, M29W004B
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| M29W004BT70N1 | 功能描述:閃存 4M (512Kx8) 70ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結構:256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| M29W004BT70N1T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:4 Mbit 512Kb x8, Boot Block Low Voltage Single Supply Flash Memory |
| M29W004BT70N6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:4 Mbit 512Kb x8, Boot Block Low Voltage Single Supply Flash Memory |
| M29W004BT90N1T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:4 Mbit 512Kb x8, Boot Block Low Voltage Single Supply Flash Memory |
| M29W004BT90N6 | 功能描述:閃存 4M (512Kx8) 90ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結構:256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
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