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參數(shù)資料
| 型號(hào)： | M29W008T-100N1TR |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | TV 22C 22#22D PIN WALL RECP |
| 中文描述： | 8兆1兆× 8，啟動(dòng)塊低壓?jiǎn)坞娫撮W存 |
| 文件頁(yè)數(shù)： | 7/30頁(yè) |
| 文件大?。?/td> | 219K |
| 代理商： | M29W008T-100N1TR |
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Address Range
A19
A18
A17
A16
A15
A14
A13
00000h-03FFFh
0
0
0
0
0
0
X
04000h-05FFFh
0
0
0
0
0
1
0
06000h-07FFFh
0
0
0
0
0
1
1
08000h-0FFFFh
0
0
0
0
1
X
X
10000h-1FFFFh
0
0
0
1
X
X
X
20000h-2FFFFh
0
0
1
0
X
X
X
30000h-3FFFFh
0
0
1
1
X
X
X
40000h-4FFFFh
0
1
0
0
X
X
X
50000h-5FFFFh
0
1
0
1
X
X
X
60000h-6FFFFh
0
1
1
0
X
X
X
70000h-7FFFFh
0
1
1
1
X
X
X
80000h-8FFFFh
1
0
0
0
1
X
X
90000h-9FFFFh
1
0
0
1
X
X
X
A0000h-AFFFFh
1
0
1
0
X
X
X
B0000h-BFFFFh
1
0
1
1
X
X
X
C0000h-CFFFFh
1
1
0
0
X
X
X
D0000h-DFFFFh
1
1
0
1
X
X
X
E0000h-6FFFFh
1
1
1
0
X
X
X
F0000h-FFFFFh
1
1
1
1
X
X
X
Table 3B. M29W008B Block Address Table
If the memory is in Erase, Erase Suspend or Pro-
gram modes the reset will take t
PLYH
during which
the RB signal will be held at V
IL
. The end of the
memory reset will be indicated by the rising edge
of RB. A hardware reset during an Erase or Pro-
gram operation will corrupt the data being pro-
grammed or the sector(s) being erased. See Table
14 and Figure 9.
Temporary block unprotection is made by holding
RP at V
ID
. In this condition previously protected
blocks can be programmed or erased. The transi-
tion of RP from V
IH
to V
ID
must slower than t
PHPHH
.
(See Table 15 and Figure 9). When RP is returned
from V
ID
to V
IH
all blocks temporarily unprotected
will be again protected.
V
CC
Supply Voltage.
The power supply for all
operations (Read, Program and Erase).
V
SS
Ground.
V
SS
is the reference for all voltage
measurements.
7/30
M29W008T, M29W008B
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M29W008T-100N5TR | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit 1Mb x8, Boot Block Low Voltage Single Supply Flash Memory |
| M29W008T-100N6TR | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit 1Mb x8, Boot Block Low Voltage Single Supply Flash Memory |
| M29W008T-120N1TR | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit 1Mb x8, Boot Block Low Voltage Single Supply Flash Memory |
| M29W008T-120N5TR | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit 1Mb x8, Boot Block Low Voltage Single Supply Flash Memory |
| M29W008T-120N6TR | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit 1Mb x8, Boot Block Low Voltage Single Supply Flash Memory |
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