參數(shù)資料
型號(hào)： M29W008T-100N5TR
廠商： 意法半導(dǎo)體
英文描述： TV 22C 22#22D PIN RECP
中文描述： 8兆1兆× 8，啟動(dòng)塊低壓?jiǎn)坞娫撮W存
文件頁(yè)數(shù)： 24/30頁(yè)
文件大小： 219K
代理商： M29W008T-100N5TR
Sym-
bol
Parameter
M29W008T / M29W008B
Unit
-90
-100
V
CC
= 3.0V to 3.6V
C
L
= 30pF
V
CC
= 2.7V to 3.6V
C
L
= 30pF
Min
Max
Min
Max
t
WHQ7V
Write Enable High to DQ7 Valid
(Program, W Controlled)
10
2400
10
2400
ms
Write Enable High to DQ7 Valid
(Chip Erase, W Controlled)
1.0
60
1.0
60
sec
t
EHQ7V
Chip Enable High to DQ7 Valid
(Program, E Controlled)
10
2400
10
2400
μ
s
Chip Enable High to DQ7 Valid
(Chip Erase, E Controlled)
1.0
60
1.0
60
sec
t
Q7VQV
Q7 Valid to Output Valid (Data Polling)
35
40
ns
t
WHQV
Write Enable High to Output Valid (Program)
10
2400
10
2400
μ
s
Write Enable High to Output Valid (Chip Erase)
1.0
60
1.0
60
sec
t
EHQV
Chip Enable High to Output Valid (Program)
10
2400
10
2400
μ
s
Chip Enable High to Output Valid (Chip Erase)
1.0
60
1.0
60
sec
Note:
1. All other timings are defined in Read AC Characteristics table.
Table 17A. Data Polling and Toggle Bit AC Characteristics
(1)
(T
A
= 0 to 70
°
C, –20 to 85
°
C or –40 to 85
°
C)
Sym-
bol
Parameter
M29W008T / M29W008B
Unit
-120
-150
V
CC
= 2.7V to 3.6V
C
L
= 100pF
V
CC
= 2.7V to 3.6V
C
L
= 100pF
Min
Max
Min
Max
t
WHQ7V
Write Enable High to DQ7 Valid
(Program, W Controlled)
10
2400
10
2400
ms
Write Enable High to DQ7 Valid
(Chip Erase, W Controlled)
1.0
60
1.0
60
sec
t
EHQ7V
Chip Enable High to DQ7 Valid
(Program, E Controlled)
10
2400
10
2400
μ
s
Chip Enable High to DQ7 Valid
(Chip Erase, E Controlled)
1.0
60
1.0
60
sec
t
Q7VQV
Q7 Valid to Output Valid (Data Polling)
50
55
ns
t
WHQV
Write Enable High to Output Valid (Program)
10
2400
10
2400
μ
s
Write Enable High to Output Valid (Chip Erase)
1.0
60
1.0
60
sec
t
EHQV
Chip Enable High to Output Valid (Program)
10
2400
10
2400
μ
s
Chip Enable High to Output Valid (Chip Erase)
1.0
60
1.0
60
sec
Note:
1. All other timings are defined in Read AC Characteristics table.
Table 17B. Data Polling and Toggle Bit AC Characteristics
(1)
(T
A
= 0 to 70
°
C, –20 to 85
°
C or –40 to 85
°
C)
24/30
M29W008T, M29W008B
相關(guān)PDF資料
PDF描述
M29W008T-100N6TR TV 22C 22#22D PIN RECP
M29W017D 16 Mbit 2Mb x8, Uniform Block 3V Supply Flash Memory
M29W017D70N1T 16 Mbit 2Mb x8, Uniform Block 3V Supply Flash Memory
M29W017D70N6T 16 Mbit 2Mb x8, Uniform Block 3V Supply Flash Memory
M29W017D90N1T 16 Mbit 2Mb x8, Uniform Block 3V Supply Flash Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M29W008T-100N6TR 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit 1Mb x8, Boot Block Low Voltage Single Supply Flash Memory
M29W008T-120N1TR 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit 1Mb x8, Boot Block Low Voltage Single Supply Flash Memory
M29W008T-120N5TR 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit 1Mb x8, Boot Block Low Voltage Single Supply Flash Memory
M29W008T-120N6TR 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit 1Mb x8, Boot Block Low Voltage Single Supply Flash Memory
M29W008T-150N1TR 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit 1Mb x8, Boot Block Low Voltage Single Supply Flash Memory
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