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參數(shù)資料
| 型號： | M29W008T-100N5TR |
| 廠商： | 意法半導體 |
| 英文描述： | TV 22C 22#22D PIN RECP |
| 中文描述： | 8兆1兆× 8，啟動塊低壓單電源閃存 |
| 文件頁數(shù)： | 6/30頁 |
| 文件大?。?/td> | 219K |
| 代理商： | M29W008T-100N5TR |
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Address Range
A19
A18
A17
A16
A15
A14
A13
00000h-0FFFFh
0
0
0
0
X
X
X
10000h-1FFFFh
0
0
0
1
X
X
X
20000h-2FFFFh
0
0
1
0
X
X
X
30000h-3FFFFh
0
0
1
1
X
X
X
40000h-4FFFFh
0
1
0
0
X
X
X
50000h-5FFFFh
0
1
0
1
X
X
X
60000h-6FFFFh
0
1
1
0
X
X
X
70000h-7FFFFh
0
1
1
1
X
X
X
80000h-8FFFFh
1
0
0
0
X
X
X
90000h-9FFFFh
1
0
0
1
X
X
X
A0000h-AFFFFh
1
0
1
0
X
X
X
B0000h-BFFFFh
1
0
1
1
X
X
X
C0000h-CFFFFh
1
1
0
0
X
X
X
D0000h-DFFFFh
1
1
0
1
X
X
X
E0000h-EFFFFh
1
1
1
0
X
X
X
F0000h-F7FFFh
1
1
1
1
0
X
X
F8000h-F9FFFh
1
1
1
1
1
0
0
FA000h-FBFFFh
1
1
1
1
1
0
1
FC000h-FFFFFh
1
1
1
1
1
1
X
Table 3A. M29W008T Block Address Table
Output Enable (G).
The Output Enable gates the
outputs through the data buffers during a read
operation. When G is High the outputs are High
impedance. G must be forced to V
ID
level during
Block Protection and Unprotection operations.
Write Enable (W).
This input controls writing to the
Command Register and Address and Data latches.
Ready/Busy Output (RB).
Ready/Busy is an
open-drain output and gives the internal state of the
P/E.C. of the device. When RB is Low, the device
is Busy with a Program or Erase operation and it
will not accept any additional program or erase
instructions except the Erase Suspend instruction.
When RB is High, the device is ready for any Read,
Program or Erase operation. The RB will also be
High when the memory is put in Erase Suspend or
Standby modes.
Reset/Block Temporary Unprotect Input (RP).
The RP Input provides hardware reset and pro-
tected block(s) temporary unprotection functions.
Reset of the memory is acheived by pulling RP to
V
IL
for at least t
PLPX
. When the reset pulse is given,
if the memory is in Read or Standby modes, it will
be available for new operations in t
PHEL
after the
rising edge of RP.
6/30
M29W008T, M29W008B
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M29W008T-100N6TR | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit 1Mb x8, Boot Block Low Voltage Single Supply Flash Memory |
| M29W008T-120N1TR | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit 1Mb x8, Boot Block Low Voltage Single Supply Flash Memory |
| M29W008T-120N5TR | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit 1Mb x8, Boot Block Low Voltage Single Supply Flash Memory |
| M29W008T-120N6TR | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit 1Mb x8, Boot Block Low Voltage Single Supply Flash Memory |
| M29W008T-150N1TR | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit 1Mb x8, Boot Block Low Voltage Single Supply Flash Memory |
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