參數(shù)資料
型號: M29W017D90ZA6T
廠商: 意法半導(dǎo)體
英文描述: 16 Mbit 2Mb x8, Uniform Block 3V Supply Flash Memory
中文描述: 16兆位的2Mb × 8,統(tǒng)一座3V電源快閃記憶體
文件頁數(shù): 12/36頁
文件大?。?/td> 251K
代理商: M29W017D90ZA6T
M29W017D
12/36
command does not exit from Unlock Bypass
Mode.
Chip Erase Command.
The Chip Erase com-
mand can be used to erase the entire chip. Six Bus
Write operations are required to issue the Chip
Erase Command and start the Program/Erase
Controller.
If any blocks are protected then these are ignored
and all the other blocks are erased. If all of the
blocks are protected the Chip Erase operation ap-
pears to start but will terminate within about 100μs,
leaving the data unchanged. No error condition is
given when protected blocks are ignored.
During the erase operation the memory will ignore
all commands, including the Erase Suspend com-
mand. It is not possible to issue any command to
abort the operation. Typical chip erase times are
given in Table 4. All Bus Read operations during
the Chip Erase operation will output the Status
Register on the Data Inputs/Outputs. See the sec-
tion on the Status Register for more details.
After the Chip Erase operation has completed the
memory will return to the Read Mode, unless an
error has occurred. When an error occurs the
memory will continue to output the Status Regis-
ter. A Read/Reset command must be issued to re-
set the error condition and return to Read Mode.
The Chip Erase Command sets all of the bits in un-
protected blocks of the memory to ’1’. All previous
data is lost.
Block Erase Command.
The Block Erase com-
mand can be used to erase a list of one or more
blocks. Six Bus Write operations are required to
select the first block in the list. Each additional
block in the list can be selected by repeating the
sixth Bus Write operation using the address of the
additional block. The Block Erase operation starts
the Program/Erase Controller about 50μs after the
last Bus Write operation. Once the Program/Erase
Controller starts it is not possible to select any
more blocks. Each additional block must therefore
be selected within 50μs of the last block. The 50μs
timer restarts when an additional block is selected.
The Status Register can be read after the sixth
Bus Write operation. See the Status Register sec-
tion for details on how to identify if the Program/
Erase Controller has started the Block Erase oper-
ation.
If any selected blocks are protected then these are
ignored and all the other selected blocks are
erased. If all of the selected blocks are protected
the Block Erase operation appears to start but will
terminate within about 100μs, leaving the data un-
changed. No error condition is given when protect-
ed blocks are ignored.
During the Block Erase operation the memory will
ignore all commands except the Erase Suspend
command. Typical block erase times are given in
Table 4. All Bus Read operations during the Block
Erase operation will output the Status Register on
the Data Inputs/Outputs. See the section on the
Status Register for more details.
After the Block Erase operation has completed the
memory will return to the Read Mode, unless an
error has occurred. When an error occurs the
memory will continue to output the Status Regis-
ter. A Read/Reset command must be issued to re-
set the error condition and return to Read mode.
The Block Erase Command sets all of the bits in
the unprotected selected blocks to ’1’. All previous
data in the selected blocks is lost.
Erase Suspend Command.
The Erase Suspend
Command may be used to temporarily suspend a
Block Erase operation and return the memory to
Read mode. The command requires one Bus
Write operation.
The Program/Erase Controller will suspend within
15μs of the Erase Suspend Command being is-
sued. Once the Program/Erase Controller has
stopped the memory will be set to Read mode and
the Erase will be suspended. If the Erase Suspend
command is issued during the period when the
memory is waiting for an additional block (before
the Program/Erase Controller starts) then the
Erase is suspended immediately and will start im-
mediately when the Erase Resume Command is
issued. It is not possible to select any further
blocks to erase after the Erase Resume. During
Erase Suspend it is possible to Read and Program
cells in blocks that are not being erased; both
Read and Program operations behave as normal
on these blocks. If any attempt is made to program
in a protected block or in the suspended block then
the Program command is ignored and the data re-
mains unchanged. The Status Register is not read
and no error condition is given. Reading from
blocks that are being erased will output the Status
Register.
It is also possible to issue the Auto Select, Read
CFI Query and Unlock Bypass commands during
an Erase Suspend. The Read/Reset command
must be issued to return the device to Read Array
mode before the Resume command will be ac-
cepted.
Erase Resume Command.
The Erase Resume
command must be used to restart the Program/
Erase Controller after an Erase Suspend. The de-
vice must be in Read Array mode before the Re-
sume command will be accepted. An erase can be
suspended and resumed more than once.
Read CFI Query Command.
The
Query Command is used to read data from the
Common Flash Interface (CFI) Memory Area. This
command is valid when the device is in the Read
Read
CFI
相關(guān)PDF資料
PDF描述
M29W017D70ZA6T 16 Mbit 2Mb x8, Uniform Block 3V Supply Flash Memory
M29W017D70ZA1T 16 Mbit 2Mb x8, Uniform Block 3V Supply Flash Memory
M29W022 2 Mbit 256Kb x8, Boot Block Low Voltage Single Supply Flash Memory
M29W022BT55NZ1T 2 Mbit 256Kb x8, Boot Block Low Voltage Single Supply Flash Memory
M29W022BB55NZ1T 2 Mbit 256Kb x8, Boot Block Low Voltage Single Supply Flash Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M29W022 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:2 Mbit 256Kb x8, Boot Block Low Voltage Single Supply Flash Memory
M29W022BB 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:2 Mbit 256Kb x8, Boot Block Low Voltage Single Supply Flash Memory
M29W022BB55K1T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:2 Mbit 256Kb x8, Boot Block Low Voltage Single Supply Flash Memory
M29W022BB55K6T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:2 Mbit 256Kb x8, Boot Block Low Voltage Single Supply Flash Memory
M29W022BB55NZ1T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:2 Mbit 256Kb x8, Boot Block Low Voltage Single Supply Flash Memory