參數(shù)資料
型號: M29W017D90ZA6T
廠商: 意法半導(dǎo)體
英文描述: 16 Mbit 2Mb x8, Uniform Block 3V Supply Flash Memory
中文描述: 16兆位的2Mb × 8,統(tǒng)一座3V電源快閃記憶體
文件頁數(shù): 13/36頁
文件大小: 251K
代理商: M29W017D90ZA6T
13/36
M29W017D
Array mode, or when the device is in Autoselected
mode.
One Bus Write cycle is required to issue the Read
CFI Query Command. Once the command is is-
sued subsequent Bus Read operations read from
the Common Flash Interface Memory Area.
The Read/Reset command must be issued to re-
turn the device to the previous mode (the Read Ar-
ray mode or Autoselected mode). A second Read/
Reset command would be needed if the device is
to be put in the Read Array mode from Autoselect-
ed mode.
See Appendix B, Tables 17, 18, 19, 20, 21 and 22
for details on the information contained in the
Common Flash Interface (CFI) memory area.
Block Protect and
Chip Unprotect Commands.
Each block can be separately protected against
accidental Program or Erase. The whole chip can
be unprotected to allow the data inside the blocks
to be changed.
Block Protect and Chip Unprotect operations are
described in Appendix C.
Table 3. Commands
Note:
x Don’t Care, PA Program Address, PD Program Data, BA Any address in the Block. All values in the table are in hexadecimal.
Command
L
Bus Write Operations
1st
2nd
3rd
4th
5th
6th
Addr
Data
Addr
Data
Addr
Data
Addr
Data
Addr
Data
Addr
Data
Read/Reset
1
x
F0
3
x
AA
x
55
x
F0
Auto Select
3
x
AA
x
55
x
90
Program
4
x
AA
x
55
x
A0
PA
PD
Unlock Bypass
3
x
AA
x
55
x
20
Unlock Bypass
Program
2
x
A0
PA
PD
Unlock Bypass Reset
2
x
90
x
00
Chip Erase
6
x
AA
x
55
x
80
x
AA
x
55
x
10
Block Erase
6+
x
AA
x
55
x
80
x
AA
x
55
BA
30
Erase Suspend
1
x
B0
Erase Resume
1
x
30
Read CFI Query
1
55
98
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