參數(shù)資料
型號： M29W320DT90ZE6E
廠商： 意法半導(dǎo)體
英文描述： 32 Mbit 4Mb x8 or 2Mb x16, Boot Block 3V Supply Flash Memory
中文描述： 32兆位4Mb的x8或功能的2Mb x16插槽，啟動塊3V電源快閃記憶體
文件頁數(shù)： 37/46頁
文件大小： 853K
代理商： M29W320DT90ZE6E
37/46
M29W320DT, M29W320DB
Table 23. CFI Query System Interface Information
Table 24. Device Geometry Definition
Address
Data
Description
Value
x16
x8
1Bh
36h
0027h
V
CC
Logic Supply Minimum Program/Erase voltage
bit 7 to 4BCD value in volts
bit 3 to 0BCD value in 100 mV
2.7V
1Ch
38h
0036h
V
CC
Logic Supply Maximum Program/Erase voltage
bit 7 to 4BCD value in volts
bit 3 to 0BCD value in 100 mV
3.6V
1Dh
3Ah
00B5h
V
PP
[Programming] Supply Minimum Program/Erase voltage
bit 7 to 4HEX value in volts
bit 3 to 0BCD value in 100 mV
11.5V
1Eh
3Ch
00C5h
V
PP
[Programming] Supply Maximum Program/Erase voltage
bit 7 to 4HEX value in volts
bit 3 to 0BCD value in 100 mV
12.5V
1Fh
3Eh
0004h
Typical timeout per single byte/word program = 2
n
μs
16μs
20h
40h
0000h
Typical timeout for minimum size write buffer program = 2
n
μs
NA
21h
42h
000Ah
Typical timeout per individual block erase = 2
n
ms
1s
22h
44h
0000h
Typical timeout for full chip erase = 2
n
ms
NA
23h
46h
0005h
Maximum timeout for byte/word program = 2
n
times typical
512μs
24h
48h
0000h
Maximum timeout for write buffer program = 2
n
times typical
NA
25h
4Ah
0004h
Maximum timeout per individual block erase = 2
n
times typical
16s
26h
4Ch
0000h
Maximum timeout for chip erase = 2
n
times typical
NA
Address
Data
Description
Value
x16
x8
27h
4Eh
0016h
Device Size = 2
n
in number of bytes
4 MByte
28h
29h
50h
52h
0002h
0000h
Flash Device Interface Code description
x8, x16
Async.
2Ah
2Bh
54h
56h
0000h
0000h
Maximum number of bytes in multi-byte program or page = 2
n
NA
2Ch
58h
0004h
Number of Erase Block Regions within the device.
It specifies the number of regions within the device containing
contiguous Erase Blocks of the same size.
4
2Dh
2Eh
5Ah
5Ch
0000h
0000h
Region 1 Information
Number of identical size erase block = 0000h+1
1
2Fh
30h
5Eh
60h
0040h
0000h
Region 1 Information
Block size in Region 1 = 0040h * 256 byte
16 Kbyte
31h
32h
62h
64h
0001h
0000h
Region 2 Information
Number of identical size erase block = 0001h+1
2
33h
34h
66h
68h
0020h
0000h
Region 2 Information
Block size in Region 2 = 0020h * 256 byte
8 Kbyte
相關(guān)PDF資料
PDF描述
M29W320DB90ZE6E 32 Mbit 4Mb x8 or 2Mb x16, Boot Block 3V Supply Flash Memory
M29W320DT70ZE6F 32 Mbit 4Mb x8 or 2Mb x16, Boot Block 3V Supply Flash Memory
M29W320DT70ZA6E 32 Mbit 4Mb x8 or 2Mb x16, Boot Block 3V Supply Flash Memory
M29W320DB70ZA6E 32 Mbit 4Mb x8 or 2Mb x16, Boot Block 3V Supply Flash Memory
M29W320DT90ZA6E 32 Mbit 4Mb x8 or 2Mb x16, Boot Block 3V Supply Flash Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M29W320EB70N1 制造商:Micron Technology Inc 功能描述:
M29W320EB70N6 功能描述:閃存 STD FLASH RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
M29W320EB70N6E 功能描述:閃存 4Mx8 or 2Mx16 70ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
M29W320EB70N6E 制造商:Micron Technology Inc 功能描述:IC FLASH BOTTOM BLOCK 32MB 29W320
M29W320EB70N6F 功能描述:閃存 STD FLASH 32 MEG RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
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