- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄359041 > M29W320DT90ZE6E (意法半導(dǎo)體) 32 Mbit 4Mb x8 or 2Mb x16, Boot Block 3V Supply Flash Memory PDF資料下載
參數(shù)資料
| 型號(hào)： | M29W320DT90ZE6E |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 32 Mbit 4Mb x8 or 2Mb x16, Boot Block 3V Supply Flash Memory |
| 中文描述： | 32兆位4Mb的x8或功能的2Mb x16插槽，啟動(dòng)塊3V電源快閃記憶體 |
| 文件頁(yè)數(shù)： | 40/46頁(yè) |
| 文件大小： | 853K |
| 代理商： | M29W320DT90ZE6E |
第1頁(yè)第2頁(yè)第3頁(yè)第4頁(yè)第5頁(yè)第6頁(yè)第7頁(yè)第8頁(yè)第9頁(yè)第10頁(yè)第11頁(yè)第12頁(yè)第13頁(yè)第14頁(yè)第15頁(yè)第16頁(yè)第17頁(yè)第18頁(yè)第19頁(yè)第20頁(yè)第21頁(yè)第22頁(yè)第23頁(yè)第24頁(yè)第25頁(yè)第26頁(yè)第27頁(yè)第28頁(yè)第29頁(yè)第30頁(yè)第31頁(yè)第32頁(yè)第33頁(yè)第34頁(yè)第35頁(yè)第36頁(yè)第37頁(yè)第38頁(yè)第39頁(yè)當(dāng)前第40頁(yè)第41頁(yè)第42頁(yè)第43頁(yè)第44頁(yè)第45頁(yè)第46頁(yè)
M29W320DT, M29W320DB
40/46
APPENDIX C. BLOCK PROTECTION
Block protection can be used to prevent any oper-
ation from modifying the data stored in the Flash.
Each Block can be protected individually. Once
protected, Program and Erase operations on the
block fail to change the data.
There are three techniques that can be used to
control Block Protection, these are the Program-
mer technique, the In-System technique and Tem-
porary Unprotection. Temporary Unprotection is
controlled by the Reset/Block Temporary Unpro-
tection pin, RP; this is described in the Signal De-
scriptions section.
Unlike the Command Interface of the Program/
Erase Controller, the techniques for protecting and
unprotecting blocks change between different
Flash memory suppliers. For example, the tech-
niques for AMD parts will not work on STMicro-
electronics parts. Care should be taken when
changing drivers for one part to work on another.
Programmer Technique
The Programmer technique uses high (V
ID
) volt-
age levels on some of the bus pins. These cannot
be achieved using a standard microprocessor bus,
therefore the technique is recommended only for
use in Programming Equipment.
To protect a block follow the flowchart in Figure
Figure 21., Programmer Equipment Block Protect
Flowchart. To unprotect the whole chip it is neces-
sary to protect all of the blocks first, then all blocks
can be unprotected at the same time. To unprotect
the chip follow Figure Figure 22., Programmer
Equipment Chip Unprotect Flowchart. Table 27.,
Programmer Technique Bus Operations, gives a
summary of each operation.
The timing on these flowcharts is critical. Care
should be taken to ensure that, where a pause is
specified, it is followed as closely as possible. Do
not abort the procedure before reaching the end.
Chip Unprotect can take several seconds and a
user message should be provided to show that the
operation is progressing.
In-System Technique
The In-System technique requires a high voltage
level on the Reset/Blocks Temporary Unprotect
pin, RP. This can be achieved without violating the
maximum ratings of the components on the micro-
processor bus, therefore this technique is suitable
for use after the Flash has been fitted to the sys-
tem.
To protect a block follow the flowchart in Figure
Figure 23., In-System Block Protect Flowchart. To
unprotect the whole chip it is necessary to protect
all of the blocks first, then all the blocks can be un-
protected at the same time. To unprotect the chip
follow Figure Figure 24., In-System Chip Unpro-
tect Flowchart.
The timing on these flowcharts is critical. Care
should be taken to ensure that, where a pause is
specified, it is followed as closely as possible. Do
not allow the microprocessor to service interrupts
that will upset the timing and do not abort the pro-
cedure before reaching the end. Chip Unprotect
can take several seconds and a user message
should be provided to show that the operation is
progressing.
Table 27. Programmer Technique Bus Operations, BYTE = V
IH
or V
IL
Operation
E
G
W
Address Inputs
A0-A20
Data Inputs/Outputs
DQ15A–1, DQ14-DQ0
Block Protect
V
IL
V
ID
V
IL
Pulse
A9 = V
ID
, A12-A20 Block Address
Others = X
X
Chip Unprotect
V
ID
V
ID
V
IL
Pulse
A9 = V
ID
, A12 = V
IH
, A15 = V
IH
Others = X
X
Block Protection
Verify
V
IL
V
IL
V
IH
A0 = V
IL
, A1 = V
IH
, A6 = V
IL
, A9 = V
ID
,
A12-A20 Block Address
Others = X
Pass = XX01h
Retry = XX00h
Block Unprotection
Verify
V
IL
V
IL
V
IH
A0 = V
IL
, A1 = V
IH
, A6 = V
IH
, A9 = V
ID
,
A12-A20 Block Address
Others = X
Retry = XX01h
Pass = XX00h
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M29W320DB90ZE6E | 32 Mbit 4Mb x8 or 2Mb x16, Boot Block 3V Supply Flash Memory |
| M29W320DT70ZE6F | 32 Mbit 4Mb x8 or 2Mb x16, Boot Block 3V Supply Flash Memory |
| M29W320DT70ZA6E | 32 Mbit 4Mb x8 or 2Mb x16, Boot Block 3V Supply Flash Memory |
| M29W320DB70ZA6E | 32 Mbit 4Mb x8 or 2Mb x16, Boot Block 3V Supply Flash Memory |
| M29W320DT90ZA6E | 32 Mbit 4Mb x8 or 2Mb x16, Boot Block 3V Supply Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M29W320EB70N1 | 制造商:Micron Technology Inc 功能描述: |
| M29W320EB70N6 | 功能描述:閃存 STD FLASH RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| M29W320EB70N6E | 功能描述:閃存 4Mx8 or 2Mx16 70ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| M29W320EB70N6E | 制造商:Micron Technology Inc 功能描述:IC FLASH BOTTOM BLOCK 32MB 29W320 |
| M29W320EB70N6F | 功能描述:閃存 STD FLASH 32 MEG RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。