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參數(shù)資料
| 型號： | M29W641DH70ZA6F |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 64 Mbit 4Mb x16, Uniform Block 3V Supply Flash Memory |
| 中文描述： | 64兆位4Mb的x16插槽，統(tǒng)一座3V電源快閃記憶體 |
| 文件頁數(shù)： | 36/42頁 |
| 文件大小： | 641K |
| 代理商： | M29W641DH70ZA6F |
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M29W641DH, M29W641DL, M29W641DU
36/42
APPENDIX D. BLOCK PROTECTION
Block protection can be used to prevent any oper-
ation from modifying the data stored in the memo-
ry.
Once
protected,
operations within the protected group fail to
change the data.
There are three techniques that can be used to
control Block Protection, these are the Program-
mer technique, the In-System technique and Tem-
porary Unprotection. Temporary Unprotection is
controlled by the Reset/Block Temporary Unpro-
tection pin, RP; this is described in the Signal De-
scriptions section.
Programmer Technique
The Programmer technique uses high (V
ID
) volt-
age levels on some of the bus pins. These cannot
be achieved using a standard microprocessor bus,
therefore the technique is recommended only for
use in Programming Equipment.
To protect a group of blocks follow the flowchart in
Figure 16, Programmer Equipment Group Protect
Flowchart. To unprotect the whole chip it is neces-
sary to protect all of the groups first, then all
groups can be unprotected at the same time. To
unprotect the chip follow Figure 17, Programmer
Equipment Chip Unprotect Flowchart. Table 25,
Programmer Technique Bus Operations, gives a
summary of each operation.
The timing on these flowcharts is critical. Care
should be taken to ensure that, where a pause is
Program
and
Erase
specified, it is followed as closely as possible. Do
not abort the procedure before reaching the end.
Chip Unprotect can take several seconds and a
user message should be provided to show that the
operation is progressing.
In-System Technique
The In-System technique requires a high voltage
level on the Reset/Blocks Temporary Unprotect
pin, RP. This can be achieved without violating the
maximum ratings of the components on the micro-
processor bus, therefore this technique is suitable
for use after the memory has been fitted to the sys-
tem.
To protect a group of blocks follow the flowchart in
Figure 18, In-System Equipment Group Protect
Flowchart. To unprotect the whole chip it is neces-
sary to protect all of the groups first, then all the
groups can be unprotected at the same time. To
unprotect the chip follow Figure 19, In-System
Equipment Chip Unprotect Flowchart.
The timing on these flowcharts is critical. Care
should be taken to ensure that, where a pause is
specified, it is followed as closely as possible. Do
not allow the microprocessor to service interrupts
that will upset the timing and do not abort the pro-
cedure before reaching the end. Chip Unprotect
can take several seconds and a user message
should be provided to show that the operation is
progressing.
Table 25. Programmer Technique Bus Operations
Note: 1. Block Protection Groups are shown in Appendix A, Tables 17.
Operation
E
G
W
Address Inputs
A0-A21
Data Inputs/Outputs
DQ15-DQ0
Block (Group)
Protect
(1)
V
IL
V
ID
V
IL
Pulse
A9 = V
ID
, A12-A21 Block Address
Others = X
X
Chip Unprotect
V
ID
V
ID
V
IL
Pulse
A9 = V
ID
, A12 = V
IH
, A15 = V
IH
Others = X
X
Block (Group)
Protection Verify
V
IL
V
IL
V
IH
A0 = V
IL
, A1 = V
IH
, A6 = V
IL
, A9 = V
ID
,
A12-A21 Block Address
Others = X
Pass = XX01h
Retry = XX00h
Block (Group)
Unprotection Verify
V
IL
V
IL
V
IH
A0 = V
IL
, A1 = V
IH
, A6 = V
IH
, A9 = V
ID
,
A12-A21 Block Address
Others = X
Retry = XX01h
Pass = XX00h
相關(guān)PDF資料 |
PDF描述 |
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| M29W641DH70ZA6T | 64 Mbit 4Mb x16, Uniform Block 3V Supply Flash Memory |
| M29W641DH70ZA6E | 64 Mbit 4Mb x16, Uniform Block 3V Supply Flash Memory |
| M29W641DL70ZA6E | 64 Mbit 4Mb x16, Uniform Block 3V Supply Flash Memory |
| M29W641DU70ZA6E | 64 Mbit 4Mb x16, Uniform Block 3V Supply Flash Memory |
| M29W641DH90ZA6E | 64 Mbit 4Mb x16, Uniform Block 3V Supply Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M29W641DH90N6 | 功能描述:閃存 64M (4Mx16) 90ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| M29W641DL90N6 | 功能描述:閃存 64M (4Mx16) 90ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| M29W641DU90ZA6 | 功能描述:閃存 64M (4Mx16) 90ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| M29W800AB100M1 | 功能描述:閃存 SO-44 1MX8 512KX16 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| M29W800AB100N1 | 功能描述:閃存 1Mx8 or 512Kx16 100n RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
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