參數(shù)資料
型號： M29W800DB90M6T
廠商： 意法半導體
英文描述： 8 Mbit (1Mb x8 or 512Kb x16, Boot Block) 3V Supply Flash Memory
中文描述： 8兆（1兆x8或512KB的x16插槽，引導塊）3V電源快閃記憶體
文件頁數(shù)： 32/41頁
文件大?。?/td> 219K
代理商： M29W800DB90M6T
M29W800DT, M29W800DB
32/41
APPENDIX B. COMMON FLASH INTERFACE (CFI)
The Common Flash Interface is a JEDEC ap-
proved, standardized data structure that can be
read from the Flash memory device. It allows a
system software to query the device to determine
various electrical and timing parameters, density
information and functions supported by the mem-
ory. The system can interface easily with the de-
vice, enabling the software to upgrade itself when
necessary.
When the CFI Query Command is issued the de-
vice enters CFI Query mode and the data structure
is read from the memory. Tables 20, 21, 22, 23, 24
and 24 show the addresses used to retrieve the
data.
The CFI data structure also contains a security
area where a 64 bit unique security number is writ-
ten (see Table , Security Code area). This area
can be accessed only in Read mode by the final
user. It is impossible to change the security num-
ber after it has been written by ST. Issue a Read
command to return to Read mode.
Table 20. Query Structure Overview
Note: Query data are always presented on the lowest order data outputs.
Table 21. CFI Query Identification String
Note:
Query data are always presented on the lowest order data outputs (DQ7-DQ0) only. DQ8-DQ15 are ‘0’.
Address
Sub-section Name
Description
x16
x8
10h
20h
CFI Query Identification String
Command set ID and algorithm data offset
1Bh
36h
System Interface Information
Device timing & voltage information
27h
4Eh
Device Geometry Definition
Flash device layout
40h
80h
Primary Algorithm-specific Extended
Query table
Additional information specific to the Primary
Algorithm (optional)
61h
C2h
Security Code Area
64 bit unique device number
Address
Data
Description
Value
x16
x8
10h
20h
0051h
"Q"
11h
22h
0052h
Query Unique ASCII String "QRY"
"R"
12h
24h
0059h
"Y"
13h
26h
0002h
Primary Algorithm Command Set and Control Interface ID code 16 bit
ID code defining a specific algorithm
AMD
Compatible
14h
28h
0000h
15h
2Ah
0040h
Address for Primary Algorithm extended Query table (see Table 23)
P = 40h
16h
2Ch
0000h
17h
2Eh
0000h
Alternate Vendor Command Set and Control Interface ID Code second
vendor - specified algorithm supported
NA
18h
30h
0000h
19h
32h
0000h
Address for Alternate Algorithm extended Query table
NA
1Ah
34h
0000h
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M29W800DB90N1 功能描述:閃存 1Mx8 or 512Kx16 90ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel
M29W800DB90N6 制造商:STMicroelectronics 功能描述:
M29W800DB90N6T 功能描述:IC FLASH 8MBIT 90NS 48TSOP RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:150 系列:- 格式 - 存儲器:EEPROMs - 串行 存儲器類型:EEPROM 存儲容量:4K (2 x 256 x 8) 速度:400kHz 接口:I²C，2 線串口 電源電壓:2.5 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-VFDFN 裸露焊盤 供應商設備封裝:8-DFN（2x3） 包裝:管件 產(chǎn)品目錄頁面:1445 (CN2011-ZH PDF)
M29W800DT45N6E 功能描述:閃存 8 MBIT (1MB) 3V SUPPLY RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel
M29W800DT45N6F 功能描述:閃存 STD FLASH RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel
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