參數資料
型號: M29W800DT70ZA1T
廠商: 意法半導體
英文描述: Low-Power Configurable Multiple-Function Gate 6-SOT-23 -40 to 85
中文描述: 8兆(1兆x8或512KB的x16插槽,引導塊)3V電源快閃記憶體
文件頁數: 33/41頁
文件大?。?/td> 219K
代理商: M29W800DT70ZA1T
33/41
M29W800DT, M29W800DB
Table 22. CFI Query System Interface Information
Note: 1. Not supported in the CFI
Address
Data
Description
Value
x16
x8
1Bh
36h
0027h
V
CC
Logic Supply Minimum Program/Erase voltage
bit 7 to 4
BCD value in volts
bit 3 to 0
BCD value in 100 mV
2.7V
1Ch
38h
0036h
V
CC
Logic Supply Maximum Program/Erase voltage
bit 7 to 4
BCD value in volts
bit 3 to 0
BCD value in 100 mV
3.6V
1Dh
3Ah
0000h
V
PP
[Programming] Supply Minimum Program/Erase voltage
NA
1Eh
3Ch
0000h
V
PP
[Programming] Supply Maximum Program/Erase voltage
NA
1Fh
3Eh
0004h
Typical timeout per single byte/word program = 2
n
μs
16μs
20h
40h
0000h
Typical timeout for minimum size write buffer program = 2
n
μs
NA
21h
42h
000Ah
Typical timeout per individual block erase = 2
n
ms
1s
22h
44h
0000h
Typical timeout for full chip erase = 2
n
ms
see note (1)
23h
46h
0004h
Maximum timeout for byte/word program = 2
n
times typical
256μs
24h
48h
0000h
Maximum timeout for write buffer program = 2
n
times typical
NA
25h
4Ah
0003h
Maximum timeout per individual block erase = 2
n
times typical
8s
26h
4Ch
0000h
Maximum timeout for chip erase = 2
n
times typical
see note (1)
相關PDF資料
PDF描述
M29W800DT70ZA6T Low-Power Configurable Multiple-Function Gate 6-SOT-23 -40 to 85
M29W800DT90M1T Low-Power Configurable Multiple-Function Gate 6-SC70 -40 to 85
M29W800DT90M6T Low-Power Configurable Multiple-Function Gate 6-SC70 -40 to 85
M29W800DT90N1T Low-Power Configurable Multiple-Function Gate 6-SC70 -40 to 85
M29W800DT90N6T Low-Power Configurable Multiple-Function Gate 6-SC70 -40 to 85
相關代理商/技術參數
參數描述
M29W800DT70ZA6 功能描述:閃存 1Mx8 or 512Kx16 70ns RoHS:否 制造商:ON Semiconductor 數據總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結構:256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel
M29W800DT70ZE6 制造商:Micron Technology Inc 功能描述:
M29W800DT70ZE6E 功能描述:閃存 STD FLASH 8 MEG RoHS:否 制造商:ON Semiconductor 數據總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結構:256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel
M29W800DT70ZE6E_NUD 制造商:Micron Technology Inc 功能描述:
M29W800DT70ZE6F 功能描述:閃存 8MB 3V SUPPLY RoHS:否 制造商:ON Semiconductor 數據總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結構:256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel