參數(shù)資料
型號: M29W800DT90N1T
廠商: 意法半導(dǎo)體
英文描述: Low-Power Configurable Multiple-Function Gate 6-SC70 -40 to 85
中文描述: 8兆(1兆x8或512KB的x16插槽,引導(dǎo)塊)3V電源快閃記憶體
文件頁數(shù): 1/41頁
文件大小: 219K
代理商: M29W800DT90N1T
1/41
April 2002
M29W800DT
M29W800DB
8 Mbit (1Mb x8 or 512Kb x16, Boot Block)
3V Supply Flash Memory
FEATURES SUMMARY
I
SUPPLY VOLTAGE
– V
CC
=
2.7V to 3.6V for Program, Erase and
Read
I
ACCESS TIME: 70, 90ns
I
PROGRAMMING TIME
– 10μs per Byte/Word typical
I
19 MEMORY BLOCKS
– 1 Boot Block (Top or Bottom Location)
– 2 Parameter and 16 Main Blocks
I
PROGRAM/ERASE CONTROLLER
– Embedded Byte/Word Program algorithms
I
ERASE SUSPEND and RESUME MODES
– Read and Program another Block during
Erase Suspend
I
UNLOCK BYPASS PROGRAM COMMAND
– Faster Production/Batch Programming
I
TEMPORARY BLOCK UNPROTECTION
MODE
I
COMMON FLASH INTERFACE
– 64 bit Security Code
I
LOW POWER CONSUMPTION
– Standby and Automatic Standby
I
100,000 PROGRAM/ERASE CYCLES per
BLOCK
I
ELECTRONIC SIGNATURE
– Manufacturer Code: 0020h
– Top Device Code M29W800DT: 22D7h
– Bottom Device Code M29W800DB: 225Bh
Figure 1. Packages
TSOP48 (N)
12 x 20mm
TFBGA48 (ZA)
8 x 6 ball array
FBGA
SO44 (M)
相關(guān)PDF資料
PDF描述
M29W800DT90N6T Low-Power Configurable Multiple-Function Gate 6-SC70 -40 to 85
M29W800DT90ZA1T Low-Power Configurable Multiple-Function Gate 6-SC70 -40 to 85
M29W800DT90ZA6T Low-Power Configurable Multiple-Function Gate 6-SC70 -40 to 85
M29W800DB90M1T 8 Mbit (1Mb x8 or 512Kb x16, Boot Block) 3V Supply Flash Memory
M29W800DB90M6T 8 Mbit (1Mb x8 or 512Kb x16, Boot Block) 3V Supply Flash Memory
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