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參數(shù)資料
| 型號： | M29W800DT90ZA1T |
| 廠商： | 意法半導體 |
| 英文描述： | Low-Power Configurable Multiple-Function Gate 6-SC70 -40 to 85 |
| 中文描述： | 8兆（1兆x8或512KB的x16插槽，引導塊）3V電源快閃記憶體 |
| 文件頁數(shù)： | 19/41頁 |
| 文件大小： | 219K |
| 代理商： | M29W800DT90ZA1T |
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M29W800DT, M29W800DB
MAXIMUM RATING
Stressing the device above the rating listed in the
Absolute Maximum Ratings" table may cause per-
manent damage to the device. Exposure to Abso-
lute Maximum Rating conditions for extended
periods may affect device reliability. These are
stress ratings only and operation of the device at
these or any other conditions above those indicat-
ed in the Operating sections of this specification is
not implied. Refer also to the STMicroelectronics
SURE Program and other relevant quality docu-
ments.
Table 8. Absolute Maximum Ratings
Note: 1.
Minimum voltage may undershoot to –2V during transition and for less than 20ns during transitions.
2. Maximum voltage may overshoot to V
CC
+2V during transition and for less than 20ns during transitions.
Symbol
Parameter
Min
Max
Unit
T
BIAS
Temperature Under Bias
–50
125
°C
T
STG
Storage Temperature
–65
150
°C
V
IO
Input or Output Voltage
(1,2)
–0.6
V
CC
+0.6
V
V
CC
Supply Voltage
–0.6
4
V
V
ID
Identification Voltage
–0.6
13.5
V
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