參數(shù)資料
型號: M29W800DT90ZA1T
廠商: 意法半導(dǎo)體
英文描述: Low-Power Configurable Multiple-Function Gate 6-SC70 -40 to 85
中文描述: 8兆(1兆x8或512KB的x16插槽,引導(dǎo)塊)3V電源快閃記憶體
文件頁數(shù): 34/41頁
文件大小: 219K
代理商: M29W800DT90ZA1T
M29W800DT, M29W800DB
34/41
Table 23. Device Geometry Definition
Address
Data
Description
Value
x16
x8
27h
4Eh
0014h
Device Size = 2
n
in number of bytes
1 MByte
28h
29h
50h
52h
0002h
0000h
Flash Device Interface Code description
x8, x16
Async.
2Ah
2Bh
54h
56h
0000h
0000h
Maximum number of bytes in multi-byte program or page = 2
n
NA
2Ch
58h
0004h
Number of Erase Block Regions within the device.
It specifies the number of regions within the device containing
contiguous Erase Blocks of the same size.
4
2Dh
2Eh
5Ah
5Ch
0000h
0000h
Region 1 Information
Number of identical size erase block = 0000h+1
1
2Fh
30h
5Eh
60h
0040h
0000h
Region 1 Information
Block size in Region 1 = 0040h * 256 byte
16 Kbyte
31h
32h
62h
64h
0001h
0000h
Region 2 Information
Number of identical size erase block = 0001h+1
2
33h
34h
66h
68h
0020h
0000h
Region 2 Information
Block size in Region 2 = 0020h * 256 byte
8 Kbyte
35h
36h
6Ah
6Ch
0000h
0000h
Region 3 Information
Number of identical size erase block = 0000h+1
1
37h
38h
6Eh
70h
0080h
0000h
Region 3 Information
Block size in Region 3 = 0080h * 256 byte
32 Kbyte
39h
3Ah
72h
74h
000Eh
0000h
Region 4 Information
Number of identical-size erase block = 000Eh+1
15
3Bh
3Ch
76h
78h
0000h
0001h
Region 4 Information
Block size in Region 4 = 0100h * 256 byte
64 Kbyte
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