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參數(shù)資料
| 型號： | M306NKFJTGP |
| 元件分類： | 微控制器/微處理器 |
| 英文描述： | 16-BIT, FLASH, 20 MHz, MICROCONTROLLER, PQFP100 |
| 封裝： | 14 X 14 MM, 0.50 MM PITCH, PLASTIC, LQFP-100 |
| 文件頁數(shù)： | 38/86頁 |
| 文件大?。?/td> | 724K |
| 代理商： | M306NKFJTGP |
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Rev.2.10
Aug 25, 2006
page 41 of 81
REJ03B0058-0210
M16C/6N Group (M16C/6NK, M16C/6NM)
5. Electric Characteristics (Normal-ver.)
Under development
This document is under development and its contents are subject to change.
2
150
ms
s
Time for internal power supply stabilization during powering-on
STOP release time
Low power dissipation mode wait mode release time
td(P-R)
td(R-S)
td(W-S)
Symbol
Parameter
Min.
Standard
Unit
Measuring
Condition
Max.
Typ.
VCC = 3.0 to 5.5 V
Table 5.10 Power Supply Circuit Timing Characteristics
CPU clock
VCC
td(P-R)
td(P-R)
Time for internal power supply
stabilization during powering-on
td(R-S)
STOP release time
td(W-S)
Low power dissipation mode
wait mode release time
CPU clock
td(W-S)
td(R-S)
(b)
(a)
Interrupt for
(a) Stop mode release
or
(b) Wait mode release
Figure 5.1 Power Supply Circuit Timing Diagram
VCC = 3.3 ± 0.3 V or 5.0 ± 0.5 V
Flash Read Operation Voltage
Flash Program, Erase Voltage
VCC = 3.0 to 5.5 V
Table 5.8 Flash Memory Version Electrical Characteristics
(1)
NOTES:
1. Referenced to VCC = 4.5 to 5.5 V, 3.0 to 3.6 V, Topr = 0 to 60°C unless otherwise specified.
2. Programming and erasure endurance refers to the number of times a block erase can be performed.
If the programming and erasure endurance is n (n = 100), each block can be erased n times.
For example, if a 4-Kbyte block A is erased after writing 1 word data 2,048 times, each to a different address,
this counts as one programming and erasure endurance. Data cannot be written to the same address more
than once without erasing the block (rewrite prohibited).
3. n denotes the number of blocks to erase.
Table 5.9 Flash Memory Version Program/Erase Voltage and Read Operation Voltage Characteristics
(at Topr = 0 to 60°C)
200
4
n (3)
15
cycle
s
Programming and erasure endurance
(2)
Word program time (VCC = 5.0 V)
Lock bit program time
Block erase time
4-Kbyte block
(VCC = 5.0 V)
8-Kbyte block
32-Kbyte block
64-Kbyte block
Erase all unlocked blocks time
Flash memory circuit stabilization wait time
Parameter
Min.
Standard
Unit
Max.
Typ.
25
0.3
0.5
0.8
Symbol
-
tps
100
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M306NMME-XXXGP | 16-BIT, MROM, 24 MHz, MICROCONTROLLER, PQFP128 |
| M306NKFHTGP | 16-BIT, FLASH, 20 MHz, MICROCONTROLLER, PQFP100 |
| M306NNFHGP | 16-BIT, FLASH, 24 MHz, MICROCONTROLLER, PQFP128 |
| M306NLFHGP | 16-BIT, FLASH, 24 MHz, MICROCONTROLLER, PQFP100 |
| M306NLFJGP | 16-BIT, FLASH, 24 MHz, MICROCONTROLLER, PQFP100 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M306NKFJVGP | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Renesas MCU |
| M306NKFJVGP#U0 | 制造商:Renesas Electronics Corporation 功能描述: |
| M306NKME-XXXGP | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Renesas MCU |
| M306NKMG-XXXGP | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Renesas MCU |
| M306NKT-EPB | 功能描述:EMULATOR PROBE M16C/6N RoHS:否 類別:編程器，開發(fā)系統(tǒng) >> 配件 系列:- 產(chǎn)品培訓(xùn)模塊:Lead (SnPb) Finish for COTS Obsolescence Mitigation Program RoHS指令信息:IButton RoHS Compliance Plan 標(biāo)準(zhǔn)包裝:1 系列:- 附件類型:USB 至 1-Wire? RJ11 適配器 適用于相關(guān)產(chǎn)品:1-Wire? 設(shè)備 產(chǎn)品目錄頁面:1429 (CN2011-ZH PDF) |
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