參數(shù)資料
型號: M30810MC-XXXFP
元件分類: 微控制器/微處理器
英文描述: 32-BIT, MROM, 32 MHz, MICROCONTROLLER, PQFP100
封裝: 14 X 20 MM, 0.65 MM PITCH, PLASTIC, QFP-100
文件頁數(shù): 72/85頁
文件大?。?/td> 876K
代理商: M30810MC-XXXFP
page 74
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5. Electrical Characteristics (VCC=3.3V)
Figure 5.10 VCC=3.3V Timing Diagram (1)
BCLK
ALE
-2ns.min
RD
18ns.max
-3ns.min
Hi-Z
DB
0ns.min
td(BCLK-ALE)
th(BCLK-ALE)
tsu(DB-BCLK)
td(BCLK-RD)
30ns.min(1)
CSi
td(BCLK-CS)
18ns.max(1)
ADi
th(BCLK-AD)
0ns.min
th(BCLK-CS)
0ns.min
BHE
tcyc
td(BCLK-AD)
0ns.min
tac2(AD-DB)(2)
WR,WRL,
WRH
18ns.max
0ns.min
BCLK
CSi
td(BCLK-CS)
18ns.max
ADi
td(BCLK-AD)
18ns.max
td(BCLK-ALE)
0ns.min
tcyc
BHE
td(DB-WR)(1)
DBi
td(BCLK-WR)
ALE
-2ns.min
th(WR-DB)(1)
td(DB-WR)=(tcyc-20)ns.min
th(WR-DB)=(tcyc/2-10)ns.min
th(WR-AD)=(tcyc/2-10)ns.min
th(WR-CS)=(tcyc/2-10)ns.min
tw(WR)=(tcyc/2-15)ns.min
Vcc=3.3V
th(BCLK-RD)
th(RD-DB)
th(RD-AD)
th(RD-CS)
th(BCLK-WR)
th(BCLK-ALE)
th(BCLK-AD)
th(BCLK-CS)
th(WR-CS)(1)
th(WR-AD)(1)
tac2(RD-DB)(2)
18ns.max(1)
Read timing
Write timing
NOTES:
1. It varies with the operation frequency.
Measurement conditions
VCC=3.0 to 3.6V
Input high and low voltage: VIH=1.5V, VIL=0.5V
Output high and low voltage: VOH=1.5V, VOL=1.5V
Memory expansion mode and microprocessor mode (with no wait state)
NOTES:
1. A value is guarantee with no external factor. Maximum 35ns is garanteed for td(BCLK-AD)+tsu(DB-BCLK).
2. It varies with the operation frequency.
tac2(RD-DB)=(tcyc/2-35)ns.max
tac2(AD-DB)=(tcyc-35)ns.max
18ns.max
tw(WR)(1)
18ns.max
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