參數(shù)資料
型號： M30840MCT-XXXGP
元件分類： 微控制器/微處理器
英文描述： 32-BIT, MROM, 32 MHz, MICROCONTROLLER, PQFP100
封裝： 14 X 14 MM, 0.50 MM PITCH, PLASTIC, LQFP-100
文件頁數(shù)： 53/91頁
文件大?。?/td> 903K
代理商： M30840MCT-XXXGP
56
38C2 Group
SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER
MITSUBISHI MICROCOMPUTERS
PRELIMINAR
Y
Notice:
This
is not
a final
specification.
Som
e parametric
limits
are
subject
to
change.
Table 11 Summary of 38C2 group’s flash memory version
FLASH MEMORY MODE
The 38C2 group’s flash memory version has an internal new
DINOR (DIvided bit line NOR) flash memory that can be rewritten
with a single power source when VCC is 4.5 to 5.5 V, and 2 power
sources when VCC is 3.0 to 4.5 V.
For this flash memory, three flash memory modes are available in
which to read, program, and erase: the parallel I/O and standard
serial I/O modes in which the flash memory can be manipulated
using a programmer and the CPU rewrite mode in which the flash
memory can be manipulated by the Central Processing Unit
(CPU).
Summary
Table 11 lists the summary of the 38C2 Group (flash memory ver-
sion).
This flash memory version has some blocks on the flash memory
as shown in Figure 61 and each block can be erased.
In addition to the ordinary User ROM area to store the MCU op-
eration control program, the flash memory has a Boot ROM area
that is used to store a program to control rewriting in CPU rewrite
and standard serial I/O modes. This Boot ROM area has had a
standard serial I/O mode control program stored in it when
shipped from the factory. However, the user can write a rewrite
control program in this area that suits the user’s application sys-
tem. This Boot ROM area can be rewritten in only parallel I/O
mode.
Item
Power source voltage (Vcc)
Program/Erase VPP voltage (VPP)
Flash memory mode
Erase block division
User ROM area
Boot ROM area
Program method
Erase method
Program/Erase control method
Number of commands
Number of program/Erase times
ROM code protection
Specifications
VCC = 2.5 to 5.5 V (Note 1)
VCC = 2.5 to (VCC at program/erase) + 0.5 V (Note 2)
VPP = 4.5 to 5.5 V, VCC = 3.0 to 5.5 V
3 modes; Parallel I/O mode, Standard serial I/O mode, CPU rewrite mode
Refer to Fig. 61.
Not divided (4K bytes) (Note 3)
In units of bytes
Block erase
Program/Erase control by software command
5 commands
100 times
Available in parallel I/O mode and standard serial I/O mode
Notes 1: It is the rating value when Vcc = 5.0 to 5.5 V at program/erase.
2: It is the rating value when Vcc = 3.0 to 5.0 V at program/erase.
3: The Boot ROM area has had a standard serial I/O mode control program stored in it when shipped from the factory. This Boot ROM area can be
erased and written in only parallel I/O mode.
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