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參數(shù)資料
| 型號： | M30L0R8000B0 |
| 廠商： | 意法半導體 |
| 英文描述： | 256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory |
| 中文描述： | 256兆位（16Mb的x16插槽，多銀行，多層次，多突發(fā)）1.8V電源快閃記憶體 |
| 文件頁數(shù)： | 54/83頁 |
| 文件大?。?/td> | 1363K |
| 代理商： | M30L0R8000B0 |
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M30L0R8000T0, M30L0R8000B0
54/83
Figure 18. Reset and Power-up AC Waveforms
Table 27. Reset and Power-up AC Characteristics
Note: 1. The device Reset is possible but not guaranteed if t
PLPH
< 50ns.
2. Sampled only, not 100% tested.
3. It is important to assert RP in order to allow proper CPU initialization during Power-Up or Reset.
Symbol
Parameter
Test Condition
85
Unit
t
PLWL
t
PLEL
t
PLGL
t
PLLL
Reset Low to
Write Enable Low,
Chip Enable Low,
Output Enable Low,
Latch Enable Low
During Program
Min
25
μs
During Erase
Min
25
μs
Other Conditions
Min
80
ns
t
PHWL
t
PHEL
t
PHGL
t
PHLL
Reset High to
Write Enable Low
Chip Enable Low
Output Enable Low
Latch Enable Low
Min
30
ns
t
PLPH (1,2)
RP Pulse Width
Min
50
ns
t
VDHPH (3)
Supply Voltages High to Reset High
Min
100
μs
AI06976
W,
RP
E, G,
VDD, VDDQ
tVDHPH
tPLPH
Power-Up
Reset
tPLWL
tPLEL
tPLGL
tPLLL
L
tPHWL
tPHEL
tPHGL
tPHLL
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| M30L0R8000B0ZAQ | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory |
| M30L0R8000B0ZAQE | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory |
| M30L0R8000B0ZAQF | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory |
| M30L0R8000B0ZAQT | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory |
| M30L0R8000T0 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory |
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