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參數(shù)資料
| 型號(hào)： | M30L0R8000B0ZAQ |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory |
| 中文描述： | 256兆位（16Mb的x16插槽，多銀行，多層次，多突發(fā)）1.8V電源快閃記憶體 |
| 文件頁(yè)數(shù)： | 61/83頁(yè) |
| 文件大?。?/td> | 1363K |
| 代理商： | M30L0R8000B0ZAQ |
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M30L0R8000T0, M30L0R8000B0
Table 38. CFI Query System Interface Information
Offset
Data
Description
Value
01Bh
0017h
V
DD
Logic Supply Minimum Program/Erase or Write voltage
bit 7 to 4 BCD value in volts
bit 3 to 0 BCD value in 100 millivolts
1.7V
01Ch
0020h
V
DD
Logic Supply Maximum Program/Erase or Write voltage
bit 7 to 4 BCD value in volts
bit 3 to 0 BCD value in 100 millivolts
2V
01Dh
0085h
V
PP
[Programming] Supply Minimum Program/Erase voltage
bit 7 to 4 HEX value in volts
bit 3 to 0 BCD value in 100 millivolts
8.5V
01Eh
0095h
V
PP
[Programming] Supply Maximum Program/Erase voltage
bit 7 to 4 HEX value in volts
bit 3 to 0 BCD value in 100 millivolts
9.5V
01Fh
0008h
Typical time-out per single byte/word program = 2
n
μs
256μs
020h
0009h
Typical time-out for Buffer Program = 2
n
μs
512μs
021h
000Ah
Typical time-out per individual block erase = 2
n
ms
1s
022h
0000h
Typical time-out for full chip erase = 2
n
ms
NA
023h
0001h
Maximum time-out for word program = 2
n
times typical
512μs
024h
0001h
Maximum time-out for Buffer Program = 2
n
times typical
1024μs
025h
0002h
Maximum time-out per individual block erase = 2
n
times typical
4s
026h
0000h
Maximum time-out for chip erase = 2
n
times typical
NA
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M30L0R8000T0 | 256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory |
| M30L0R8000B0 | 256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory |
| M30LW128D | 128 Mbit (two 64Mbit, x8/x16, Uniform Block, Flash Memories) 3V Supply, Multiple Memory Product |
| M30LW128D110N1T | 128 Mbit (two 64Mbit, x8/x16, Uniform Block, Flash Memories) 3V Supply, Multiple Memory Product |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M30L0R8000B0ZAQE | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory |
| M30L0R8000B0ZAQF | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory |
| M30L0R8000B0ZAQT | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory |
| M30L0R8000T0 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory |
| M30L0R8000T0ZAQ | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory |
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