參數(shù)資料
型號(hào)： M30L0R8000B0ZAQ
廠商： 意法半導(dǎo)體
英文描述： 256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory
中文描述： 256兆位（16Mb的x16插槽，多銀行，多層次，多突發(fā)）1.8V電源快閃記憶體
文件頁(yè)數(shù)： 65/83頁(yè)
文件大?。?/td> 1363K
代理商： M30L0R8000B0ZAQ
65/83
M30L0R8000T0, M30L0R8000B0
Table 42. Burst Read Information
Table 43. Bank and Erase Block Region Information
Note: 1. The variable P is a pointer which is defined at CFI offset 015h.
2. Bank Regions. There are two Bank Regions, see Tables
30
,
31
,
32
,
33
,
34
and
35
in
APPENDIX A.
Offset
Data
Description
Value
(P+1D)h = 127h
0004h
Page-mode read capability
bits 0-7 ’n’ such that 2
n
HEX value represents the number of read-page
bytes. See offset 0028h for device word width to
determine page-mode data output width.
16 Bytes
(P+1E)h = 128h
0004h
Number of synchronous mode read configuration fields that follow.
4
(P+1F)h = 129h
0001h
Synchronous mode read capability configuration 1
bit 3-7 Reserved
bit 0-2 ’n’ such that 2
n+1
HEX value represents the maximum number of
continuous synchronous reads when the device is configured
for its maximum word width. A value of 07h indicates that the
device is capable of continuous linear bursts that will output
device’s burstable address space. This field’s 3-bit value can
be written directly to the read configuration register bit 0-2 if
the device is configured for its maximum word width. See
offset 0028h for word width to determine the burst data output
width.
4
(P+20)h = 12Ah
0002h
Synchronous mode read capability configuration 2
8
(P-21)h = 12Bh
(P+22)h = 12Ch
0003h
0007h
Synchronous mode read capability configuration 3
16
Synchronous mode read capability configuration 4
Cont.
Flash memory (top)
Flash memory (bottom)
Description
Offset
Data
Offset
Data
(P+23)h = 12Dh
02h
(P+23)h = 12Dh
02h
Number of Bank Regions within the device
相關(guān)PDF資料
PDF描述
M30L0R8000T0 256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory
M30L0R8000B0 256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory
M30LW128D 128 Mbit (two 64Mbit, x8/x16, Uniform Block, Flash Memories) 3V Supply, Multiple Memory Product
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M30L0R8000B0ZAQE 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory
M30L0R8000B0ZAQF 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory
M30L0R8000B0ZAQT 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory
M30L0R8000T0 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory
M30L0R8000T0ZAQ 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory
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