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參數(shù)資料
| 型號： | M30L0R8000T0ZAQ |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory |
| 中文描述： | 256兆位（16Mb的x16插槽，多銀行，多層次，多突發(fā)）1.8V電源快閃記憶體 |
| 文件頁數(shù)： | 25/83頁 |
| 文件大?。?/td> | 1363K |
| 代理商： | M30L0R8000T0ZAQ |
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M30L0R8000T0, M30L0R8000B0
Once set High, the V
PP
Status bit must be set Low
by a Clear Status Register command or a hard-
ware reset before a new program or erase com-
mand is issued, otherwise the new command will
appear to fail.
Program Suspend Status Bit (SR2).
The Pro-
gram Suspend Status bit indicates that a program
operation has been suspended in the addressed
block. The Program Suspend Status bit should
only be considered valid when the Program/Erase
Controller Status bit is High (Program/Erase Con-
troller inactive).
When the Program Suspend Status bit is High (set
to ‘1’), a Program/Erase Suspend command has
been issued and the memory is waiting for a Pro-
gram/Erase Resume command.
SR2 is set within the Program Suspend Latency
time of the Program/Erase Suspend command be-
ing issued therefore the memory may still com-
plete the operation rather than entering the
Suspend mode.
When a Program/Erase Resume command is is-
sued the Program Suspend Status bit returns Low.
Block Protection Status Bit (SR1).
The
Protection Status bit is used to identify if a Pro-
gram or Block Erase operation has tried to modify
the contents of a locked block.
When the Block Protection Status bit is High (set
to ‘1’), a program or erase operation has been at-
tempted on a locked block.
Block
Once set High, the Block Protection Status bit
must be set Low by a Clear Status Register com-
mand or a hardware reset before a new program
or erase command is issued, otherwise the new
command will appear to fail.
Bank Write/Multiple Word Program Status Bit
(SR0).
The Bank Write Status bit indicates wheth-
er the addressed bank is programming or erasing.
In Buffer Enhanced Factory Program mode the
Multiple Word Program bit shows if the device is
ready to accept a new Word to be programmed to
the memory array.
The Bank Write Status bit should only be consid-
ered valid when the Program/Erase Controller Sta-
tus SR7 is Low (set to ‘0’).
When both the Program/Erase Controller Status bit
and the Bank Write Status bit are Low (set to ‘0’),
the addressed bank is executing a program or
erase operation. When the Program/Erase Con-
troller Status bit is Low (set to ‘0’) and the Bank
Write Status bit is High (set to ‘1’), a program or
erase operation is being executed in a bank other
than the one being addressed.
In Buffer Enhanced Factory Program mode if Mul-
tiple Word Program Status bit is Low (set to ‘0’),
the device is ready for the next Word, if the Multi-
ple Word Program Status bit is High (set to ‘1’) the
device is not ready for the next Word.
For further details on how to use the Status Regis-
ter, see the Flowcharts and Pseudo codes provid-
ed in
APPENDIX C.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M30L0R8000T0ZAQF | 256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory |
| M30L0R8000T0ZAQT | 256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory |
| M30L0R8000T0ZAQE | AB 35C 7#12,28#16 PIN RECP |
| M30L0R8000B0ZAQE | 256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory |
| M30L0R8000B0ZAQF | CAP 0.1UF 50V 10% X7R DIP-2 BULK S-MIL-C-39014 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M30L0R8000T0ZAQE | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory |
| M30L0R8000T0ZAQF | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory |
| M30L0R8000T0ZAQT | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory |
| M30L40C | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Dual Common-Cathode Schottky Rectifier |
| M30L40C-E3/4W | 功能描述:肖特基二極管與整流器 40 Volt 30 Amp Dual Common-Cathode RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復(fù)時間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel |
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