參數(shù)資料
型號(hào): M30LW128D110N1T
廠商: 意法半導(dǎo)體
英文描述: 128 Mbit (two 64Mbit, x8/x16, Uniform Block, Flash Memories) 3V Supply, Multiple Memory Product
中文描述: 128兆位(兩個(gè)64兆比特,x8/x16,統(tǒng)一座,快閃記憶體)3V電源,多記憶體產(chǎn)品
文件頁(yè)數(shù): 24/57頁(yè)
文件大小: 860K
代理商: M30LW128D110N1T
M30LW128D
24/57
Table 10. Program/Erase Times and Program/Erase Endurance Cycles
Note: 1. Typical values measured at room temperature and nominal voltages.
2. Sampled, but not 100% tested.
3.
Effective byte programming time 6μs, effective word programming time 12μs.
4. Maximum value measured at worst case conditions for both temperature and V
DD
after 100,000 program/erase cycles.
5. Maximum value measured at worst case conditions for both temperature and V
DD
.
Parameters
M30LW128D
Unit
Min
Typ
(1,2)
Max
(2)
Block (1Mb) Erase
1.2
4.8
(4)
s
Chip Program (Write to Buffer)
98
290
(4)
s
Chip Erase Time
148
440
(4)
s
Program Write Buffer
192
(3)
576
(4)
μs
Word/Byte Program Time
(Word/Byte Program command)
16
48
(4)
μs
Program Suspend Latency Time
1
20
(5)
μs
Erase Suspend Latency Time
1
25
(5)
μs
Block Protect Time
18
30
(5)
μs
Blocks Unprotect Time
0.75
1.2
(5)
s
Program/Erase Cycles (per block)
100,000
cycles
Data Retention
20
years
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