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參數(shù)資料
| 型號： | M30LW128D110N1T |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 128 Mbit (two 64Mbit, x8/x16, Uniform Block, Flash Memories) 3V Supply, Multiple Memory Product |
| 中文描述： | 128兆位（兩個(gè)64兆比特，x8/x16，統(tǒng)一座，快閃記憶體）3V電源，多記憶體產(chǎn)品 |
| 文件頁數(shù)： | 27/57頁 |
| 文件大?。?/td> | 860K |
| 代理商： | M30LW128D110N1T |
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M30LW128D
Table 11. Status Register Bits
OPERATION
Bit 7
Bit 6
Bit 5
Bit 4
Bit 3
Bit 2
Bit 1
Result
(Hex)
Program/Erase Controller active
0
Hi-Z
N/A
Write Buffer not ready
0
Hi-Z
N/A
Write Buffer ready
1
0
0
0
0
0
0
80h
Write Buffer ready in Erase Suspend
1
1
0
0
0
0
0
C0h
Program suspended
1
0
0
0
0
1
0
84h
Program suspended in Erase Suspend
1
1
0
0
0
1
0
C4h
Program/Block Protect completed
successfully
1
0
0
0
0
0
0
80h
Program completed successfully in Erase
Suspend
1
1
0
0
0
0
0
C0h
Program/Block protect failure due to incorrect
command sequence
1
0
1
1
0
0
0
B0h
Program failure due to incorrect command
sequence in Erase Suspend
1
1
1
1
0
0
0
F0h
Program/Block Protect failure due to
V
PEN
error
1
0
0
1
1
0
0
98h
Program failure due to
V
PEN
error in Erase
Suspend
1
1
0
1
1
0
0
D8h
Program failure due to Block Protection
1
0
0
1
0
0
1
92h
Program failure due to Block Protection in
Erase Suspend
1
1
0
1
0
0
1
D2h
Program/Block Protect failure due to cell
failure
1
0
0
1
0
0
0
90h
Program failure due to cell failure in Erase
Suspend
1
1
0
1
0
0
0
D0h
Erase Suspended
1
1
0
0
0
0
0
C0h
Erase/Blocks Unprotect completed
successfully
1
0
0
0
0
0
0
80h
Erase/Blocks Unprotect failure due to
incorrect command sequence
1
0
1
1
0
0
0
B0h
Erase/Blocks Unprotect failure due to
V
PEN
error
1
0
1
0
1
0
0
A8h
Erase failure due to Block Protection
1
0
1
0
0
0
1
A2h
Erase/Blocks Unprotect failure due to failed
cells in Block
1
0
1
0
0
0
0
A0h
Configure STS error due to invalid
configuration code
1
0
1
1
0
0
0
B0h
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M30LW128D110N6T | 128 Mbit (two 64Mbit, x8/x16, Uniform Block, Flash Memories) 3V Supply, Multiple Memory Product |
| M30LW128D110ZA1T | 128 Mbit (two 64Mbit, x8/x16, Uniform Block, Flash Memories) 3V Supply, Multiple Memory Product |
| M30LW128D110ZA6T | 128 Mbit (two 64Mbit, x8/x16, Uniform Block, Flash Memories) 3V Supply, Multiple Memory Product |
| M30LW128D110ZE1T | 128 Mbit (two 64Mbit, x8/x16, Uniform Block, Flash Memories) 3V Supply, Multiple Memory Product |
| M30LW128D110ZE6T | 128 Mbit (two 64Mbit, x8/x16, Uniform Block, Flash Memories) 3V Supply, Multiple Memory Product |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M30LW128D110N6 | 功能描述:閃存 Two 8Mx8 or 4Mx16 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| M30LW128D110N6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit (two 64Mbit, x8/x16, Uniform Block, Flash Memories) 3V Supply, Multiple Memory Product |
| M30LW128D110ZA1T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit (two 64Mbit, x8/x16, Uniform Block, Flash Memories) 3V Supply, Multiple Memory Product |
| M30LW128D110ZA6 | 功能描述:閃存 Two 8Mx8 or 4Mx16 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| M30LW128D-110ZA6 | 制造商:STMicroelectronics 功能描述: |
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