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參數(shù)資料
| 型號： | M34C02-W-WMB1G |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 2 Kbit Serial IC Bus EEPROM for DIMM serial presence detect |
| 中文描述： | 2千位串行IC總線的EEPROM內(nèi)存串行存在檢測 |
| 文件頁數(shù)： | 13/31頁 |
| 文件大?。?/td> | 162K |
| 代理商： | M34C02-W-WMB1G |
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M34C02-W, M34C02-L, M34C02-R
Device operation
13/31
3.6
Setting the Software Write-Protection
The M34C02-W has a hardware write-protection feature, using the Write Control (WC)
signal. This signal can be driven High or Low, and must be held constant for the whole
instruction sequence. When Write Control (WC) is held Low, the whole memory array
(addresses 00h to FFh) is write protected. When Write Control (WC) is held High, the write
protection of the memory array is dependent on whether software write-protection has been
set.
Software write-protection allows the bottom half of the memory area (addresses 00h to 7Fh)
to be permanently write protected irrespective of subsequent states of the Write Control
(WC) signal.
The write protection feature is activated by writing once to the Protection Register. The
Protection Register is accessed with the device select code set to 0110b (as shown in
Table 2
), and the E2, E1 and E0 bits set according to the states being applied on the E2, E1
and E0 signals. As for any other write command, Write Control (WC) needs to be held Low.
Address and data bytes must be sent with this command, but their values are all ignored,
and are treated as Don’t Care. Once the Protection Register has been written, the write
protection of the first 128 Bytes of the memory is enabled, and it is not possible to unprotect
these 128 Bytes, even if the device is powered off and on, and regardless the state of Write
Control (WC).
When the Protection Register has been written, the M34C02-W no longer responds to the
device type identifier 0110b in either read or write mode.
Figure 7.
Result of setting the write protection
Default EEPROM memory area
state before write access
to the Protect Register
AI01936C
Standard
Array
FFh
Standard
Array
80h
7Fh
00h
Standard
Array
FFh
Write
Protected
Array
80h
7Fh
00h
State of the EEPROM memory
area after write access
to the Protect Register
Memory
Area
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| M34C02-W-WMB1TG | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:2 Kbit Serial IC Bus EEPROM for DIMM serial presence detect |
| M34C02-W-WMB6TG | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:2 Kbit Serial IC Bus EEPROM for DIMM serial presence detect |
| M34C106K125AZSS | 功能描述:鉭質(zhì)電容器-濕式 10uF 125volts 10% C Case RoHS:否 制造商:Vishay/Tansitor 電容:2800 uF 電壓額定值:35 V ESR:0.35 Ohms 容差:20 % 端接類型:Axial 工作溫度范圍:- 55 C to + 85 C 制造商庫存號:T4 Case 外殼直徑:9.52 mm 外殼長度:26.97 mm 外殼寬度: 外殼高度: 系列:STE 產(chǎn)品:Tantalum Wet Hermetically Sealed 封裝:Bulk |
| M34C106K125BZSS | 功能描述:鉭質(zhì)電容器-濕式 10uF 125volts 10% C Case RoHS:否 制造商:Vishay/Tansitor 電容:2800 uF 電壓額定值:35 V ESR:0.35 Ohms 容差:20 % 端接類型:Axial 工作溫度范圍:- 55 C to + 85 C 制造商庫存號:T4 Case 外殼直徑:9.52 mm 外殼長度:26.97 mm 外殼寬度: 外殼高度: 系列:STE 產(chǎn)品:Tantalum Wet Hermetically Sealed 封裝:Bulk |
| M34C106M125AZSS | 制造商:Vishay Sprague 功能描述:- Bulk |
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