參數(shù)資料
型號(hào)： M34C02-W-WMB1G
廠商： 意法半導(dǎo)體
英文描述： 2 Kbit Serial IC Bus EEPROM for DIMM serial presence detect
中文描述： 2千位串行IC總線的EEPROM內(nèi)存串行存在檢測(cè)
文件頁(yè)數(shù)： 9/31頁(yè)
文件大?。?/td> 162K
代理商： M34C02-W-WMB1G
M34C02-W, M34C02-L, M34C02-R
Signal description
9/31
2.5
Supply voltage (V
CC
)
2.5.1
Operating supply voltage V
CC
Prior to selecting the memory and issuing instructions to it, a valid and stable V
CC
voltage
within the specified [V
CC
(min), V
CC
(max)] range must be applied (see
Table 6
,
Table 7
and
Table 8
). In order to secure a stable DC supply voltage, it is recommended to decouple the
V
CC
line with a suitable capacitor (usually of the order of 10nF to 100nF) close to the
V
CC
/V
SS
package pins.
This voltage must remain stable and valid until the end of the transmission of the instruction
and, for a Write instruction, until the completion of the internal write cycle (t
W
).
2.5.2
Internal device reset
In order to prevent inadvertent Write operations during Power-up, a Power On Reset (POR)
circuit is included. At Power-up (continuous rise of V
CC
), the device will not respond to any
instruction until V
CC
has reached the Power On Reset threshold voltage (this threshold is
lower than the minimum V
CC
operating voltage defined in
Table 6
,
Table 7
and
Table 8
).
When V
CC
has passed the POR threshold, the device is reset and in the Standby Power
mode.
2.5.3
Power-down
At Power-down (where V
CC
decreases continuously), as soon as V
CC
drops from the normal
operating voltage to below the Power On Reset threshold voltage, the device stops
responding to any instruction sent to it.
During Power-down, the device must be deselected and in Standby Power mode (that is
there should be no internal Write cycle in progress).
Figure 4.
Maximum R
P
value versus bus parasitic capacitance (C) for an I2C Bus
AI01665b
VCC
C
SDA
R
P
MASTER
R
P
SCL
C
100
0
4
8
12
16
20
C (pF)
M
)
10
1000
fc = 400kHz
fc = 100kHz
相關(guān)PDF資料
PDF描述
M34C02-W-WMB1TG 2 Kbit Serial IC Bus EEPROM for DIMM serial presence detect
M34C02-W-WMB6TG 2 Kbit Serial IC Bus EEPROM for DIMM serial presence detect
M34E02-FDW1T 2 Kbit Serial IC Bus EEPROM Serial Presence Detect for DDR2 DIMMs
M34S32BN CAP 220UF 35V ELECT LXY RAD
M34S32MN 32K Serial I2C Bus EEPROM With User-Defined Read-Only Block and 32-Byte OTP Page
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M34C02-W-WMB1TG 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:2 Kbit Serial IC Bus EEPROM for DIMM serial presence detect
M34C02-W-WMB6TG 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:2 Kbit Serial IC Bus EEPROM for DIMM serial presence detect
M34C106K125AZSS 功能描述:鉭質(zhì)電容器-濕式 10uF 125volts 10% C Case RoHS:否 制造商:Vishay/Tansitor 電容:2800 uF 電壓額定值:35 V ESR:0.35 Ohms 容差:20 % 端接類型:Axial 工作溫度范圍:- 55 C to + 85 C 制造商庫(kù)存號(hào):T4 Case 外殼直徑:9.52 mm 外殼長(zhǎng)度:26.97 mm 外殼寬度: 外殼高度: 系列:STE 產(chǎn)品:Tantalum Wet Hermetically Sealed 封裝:Bulk
M34C106K125BZSS 功能描述:鉭質(zhì)電容器-濕式 10uF 125volts 10% C Case RoHS:否 制造商:Vishay/Tansitor 電容:2800 uF 電壓額定值:35 V ESR:0.35 Ohms 容差:20 % 端接類型:Axial 工作溫度范圍:- 55 C to + 85 C 制造商庫(kù)存號(hào):T4 Case 外殼直徑:9.52 mm 外殼長(zhǎng)度:26.97 mm 外殼寬度: 外殼高度: 系列:STE 產(chǎn)品:Tantalum Wet Hermetically Sealed 封裝:Bulk
M34C106M125AZSS 制造商:Vishay Sprague 功能描述:- Bulk
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*