參數(shù)資料
型號: M368L6523BTM-CCC
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: DDR SDRAM Unbuffered Module 184pin Unbuffered Module based on 512Mb B-die with 64/72-bit Non ECC/ECC 66 TSOP-II
中文描述: DDR SDRAM的緩沖模塊184pin緩沖模塊基于512Mb乙芯片與64/72-bit非ECC / ECC的66 TSOP-II
文件頁數(shù): 20/25頁
文件大?。?/td> 464K
代理商: M368L6523BTM-CCC
DDR SDRAM
256MB, 512MB, 1GB Unbuffered DIMM
Rev. 1.1 June 2005
CC(DDR400@CL=3)
B3(DDR333@CL=2.5)
Speed @CL2
-
133MHz
Speed @CL2.5
166MHz
Speed @CL3
200MHz
-
CL-tRCD-tRP
3-3-3
2.5-3-3
184Pin Unbuffered DIMM based on 512Mb B-die (x8, x16)
VDD : 2.5V ± 0.2V, VDDQ : 2.5V ± 0.2V for DDR333
VDD : 2.6V ± 0.1V, VDDQ : 2.6V ± 0.1V for DDR400
Double-data-rate architecture; two data transfers per clock cycle
Bidirectional data strobe [DQ] (x4,x8) & [L(U)DQS] (x16)
Differential clock inputs(CK and CK)
DLL aligns DQ and DQS transition with CK transition
Programmable Read latency : DDR333(2.5 Clock), DDR400(3 Clock)
Programmable Burst length (2, 4, 8)
Programmable Burst type (sequential & interleave)
Edge aligned data output, center aligned data input
Auto & Self refresh, 7.8us refresh interval(8K/64ms refresh)
Serial presence detect with EEPROM
PCB : Height 1,250 (mil) & single (256, 512MB), double (1GB) sided
SSTL_2 Interface
66pin TSOP II (Leaded & Pb-Free(RoHS compliant)) package
1.0 Ordering Information
2.0 Operating Frequencies
Note : Leaded and Lead-free(Pb-free) can be discriminated by PKG P/N (T : 66 TSOP with Leaded, U : 66 TSOP with Lead-free)
Part Number
Density
Organization
Component Composition
Height
M368L3324BT(U)M-C(L)CC/B3
256MB
32M x 64
32Mx16 (K4H511638B) * 4EA
1,250mil
M368L6523BT(U)M-C(L)CC
512MB
64M x 64
64Mx8 (K4H510838B) * 8EA
1,250mil
M368L6523BT(U)N-C(L)B3
M381L6523BT(U)M-C(L)CC/B3
512MB
64M x 72
64Mx8 (K4H510838B) * 9EA
1,250mil
M368L2923BT(U)M-C(L)CC
1GB
128M x 64
64Mx8 (K4H510838B) * 16EA
1,250mil
M368L2923BT(U)N-C(L)B3
M381L2923BT(U)M-C(L)CC/B3
1GB
128M x 72
64Mx8 (K4H510838B) * 18EA
1,250mil
3.0 Feature
相關(guān)PDF資料
PDF描述
M368L6523BTM-LCC DDR SDRAM Unbuffered Module 184pin Unbuffered Module based on 512Mb B-die with 64/72-bit Non ECC/ECC 66 TSOP-II
M368L6523BTN-LB3 DDR SDRAM Unbuffered Module 184pin Unbuffered Module based on 512Mb B-die with 64/72-bit Non ECC/ECC 66 TSOP-II
M368L6523BUM-CCC DDR SDRAM Unbuffered Module 184pin Unbuffered Module based on 512Mb B-die with 64/72-bit Non ECC/ECC 66 TSOP-II
M368L6523BUM-LCC DDR SDRAM Unbuffered Module 184pin Unbuffered Module based on 512Mb B-die with 64/72-bit Non ECC/ECC 66 TSOP-II
M368L6523BUN-LB3 DDR SDRAM Unbuffered Module 184pin Unbuffered Module based on 512Mb B-die with 64/72-bit Non ECC/ECC 66 TSOP-II
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M368L6523BTM-LCC 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:DDR SDRAM Unbuffered Module 184pin Unbuffered Module based on 512Mb B-die with 64/72-bit Non ECC/ECC 66 TSOP-II
M368L6523BTN-CB3 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:DDR SDRAM Unbuffered Module 184pin Unbuffered Module based on 512Mb B-die with 64/72-bit Non ECC/ECC 66 TSOP-II
M368L6523BTN-LB3 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:DDR SDRAM Unbuffered Module 184pin Unbuffered Module based on 512Mb B-die with 64/72-bit Non ECC/ECC 66 TSOP-II
M368L6523BUM-CCC 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:DDR SDRAM Unbuffered Module 184pin Unbuffered Module based on 512Mb B-die with 64/72-bit Non ECC/ECC 66 TSOP-II
M368L6523BUM-LCC 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:DDR SDRAM Unbuffered Module 184pin Unbuffered Module based on 512Mb B-die with 64/72-bit Non ECC/ECC 66 TSOP-II