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參數(shù)資料
| 型號： | M368L6523BTM-CCC |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | DDR SDRAM Unbuffered Module 184pin Unbuffered Module based on 512Mb B-die with 64/72-bit Non ECC/ECC 66 TSOP-II |
| 中文描述： | DDR SDRAM的緩沖模塊184pin緩沖模塊基于512Mb乙芯片與64/72-bit非ECC / ECC的66 TSOP-II |
| 文件頁數(shù)： | 5/25頁 |
| 文件大?。?/td> | 464K |
| 代理商： | M368L6523BTM-CCC |
DDR SDRAM
256MB, 512MB, 1GB Unbuffered DIMM
Rev. 1.1 June 2005
(VDD=2.7V, T = 10°C)
* Module IDD was calculated on the basis of component IDD and can be differently measured according to DQ loading cap.
Symbol
CC(DDR400@CL=3)
B0(DDR333@CL=2.5)
Unit
Notes
IDD0
1,485
1,130
mA
IDD1
1,665
1,350
mA
IDD2P
45
mA
IDD2F
270
mA
IDD2Q
225
230
mA
IDD3P
500
270
mA
IDD3N
855
450
mA
IDD4R
1,800
1,490
mA
IDD4W
2,160
1,710
mA
IDD5
2,385
2,250
mA
IDD6
Normal
45
mA
Low power
27
mA
Optional
IDD7A
3,870
3,600
mA
(VDD=2.7V, T = 10°C)
* Module IDD was calculated on the basis of component IDD and can be differently measured according to DQ loading cap.
Symbol
CC(DDR400@CL=3)
B0(DDR333@CL=2.5)
Unit
Notes
IDD0
2,080
1,400
mA
IDD1
2,240
1,600
mA
IDD2P
80
mA
IDD2F
480
mA
IDD2Q
400
mA
IDD3P
880
480
mA
IDD3N
1,520
800
mA
IDD4R
2,360
1,720
mA
IDD4W
2,680
1,920
mA
IDD5
2,880
2,400
mA
IDD6
Normal
80
mA
Low power
48
mA
Optional
IDD7A
4,200
3,600
mA
9.4 M368L2923BT(U) [ (64M x 8) * 16, 1GB Non ECC Module ]
9.3 M381L6523BT(U) [ (64M x 8) * 9, 512MB ECC Module ]
相關PDF資料 |
PDF描述 |
|---|---|
| M368L6523BTM-LCC | DDR SDRAM Unbuffered Module 184pin Unbuffered Module based on 512Mb B-die with 64/72-bit Non ECC/ECC 66 TSOP-II |
| M368L6523BTN-LB3 | DDR SDRAM Unbuffered Module 184pin Unbuffered Module based on 512Mb B-die with 64/72-bit Non ECC/ECC 66 TSOP-II |
| M368L6523BUM-CCC | DDR SDRAM Unbuffered Module 184pin Unbuffered Module based on 512Mb B-die with 64/72-bit Non ECC/ECC 66 TSOP-II |
| M368L6523BUM-LCC | DDR SDRAM Unbuffered Module 184pin Unbuffered Module based on 512Mb B-die with 64/72-bit Non ECC/ECC 66 TSOP-II |
| M368L6523BUN-LB3 | DDR SDRAM Unbuffered Module 184pin Unbuffered Module based on 512Mb B-die with 64/72-bit Non ECC/ECC 66 TSOP-II |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| M368L6523BTM-LCC | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:DDR SDRAM Unbuffered Module 184pin Unbuffered Module based on 512Mb B-die with 64/72-bit Non ECC/ECC 66 TSOP-II |
| M368L6523BTN-CB3 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:DDR SDRAM Unbuffered Module 184pin Unbuffered Module based on 512Mb B-die with 64/72-bit Non ECC/ECC 66 TSOP-II |
| M368L6523BTN-LB3 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:DDR SDRAM Unbuffered Module 184pin Unbuffered Module based on 512Mb B-die with 64/72-bit Non ECC/ECC 66 TSOP-II |
| M368L6523BUM-CCC | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:DDR SDRAM Unbuffered Module 184pin Unbuffered Module based on 512Mb B-die with 64/72-bit Non ECC/ECC 66 TSOP-II |
| M368L6523BUM-LCC | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:DDR SDRAM Unbuffered Module 184pin Unbuffered Module based on 512Mb B-die with 64/72-bit Non ECC/ECC 66 TSOP-II |
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