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參數(shù)資料
| 型號： | M36DR432B100ZA6T |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product |
| 中文描述： | 32兆位的2Mb x16插槽，雙行，頁閃存和4兆位256K x16的SRAM，多個存儲產(chǎn)品 |
| 文件頁數(shù)： | 6/52頁 |
| 文件大?。?/td> | 834K |
| 代理商： | M36DR432B100ZA6T |
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M36DR432AD, M36DR432BD
6/52
SUMMARY DESCRIPTION
The M36DR432AD/BD is a low-voltage Multiple
Memory Product which combines two memory de-
vices: a 32 Mbit (2Mbit x16) non-volatile Flash
memory and a 4 Mbit SRAM.
The memory is available in a Stacked LFBGA66
12x8mm - 8x8 active ball array, 0.8mm pitch pack-
age and supplied with all the bits erased (set to
‘1’).
Figure 2. Logic Diagram
Table 1. Signal Names
AI07309b
21
A0-A20
WF
DQ0-DQ15
VDDF
M36DR432AD
M36DR432BD
EF
VSSF
16
GF
RPF
WPF
VPPF
E1S
GS
WS
UBS
LBS
VSSS
VDDS
E2S
A0-A17
Address Inputs
A18-A20
Address Inputs for Flash Chip only
DQ0-DQ15
Data Input/Outputs, Command Inputs
V
DDF
Flash Power Supply
V
PPF
Flash Optional Supply Voltage for Fast
Program & Erase
V
SSF
Flash Ground
V
DDS
SRAM Power Supply
V
SSS
SRAM Ground
NC
Not Connected Internally
Flash control functions
EF
Chip Enable
GF
Output Enable
WF
Write Enable
RPF
Reset/Power-Down
WPF
Write Protect input
SRAM control functions
E1S
Chip Enable
E2S
Chip Enable
GS
Output Enable
WS
Write Enable
UBS
Upper Byte Enable
LBS
Lower Byte Enable
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| M36DR432BDZA | 32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256Kb x16 SRAM, Multiple Memory Product |
| M36DR432B | 32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product |
| M36L0R7050B0 | 128 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory 32 Mbit (2M x16) PSRAM, 1.8V Supply Multi-Chip Package |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M36DR432B120ZA6C | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product |
| M36DR432B120ZA6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product |
| M36DR432BD | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256Kb x16 SRAM, Multiple Memory Product |
| M36DR432BD10ZA6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256Kb x16 SRAM, Multiple Memory Product |
| M36DR432BD12ZA6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256Kb x16 SRAM, Multiple Memory Product |
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