型號 | 廠商 | 描述 |
m36dr432ca10za6t 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | 32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product |
m36dr432ca85za6t 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | 32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product |
m36dr432b120za6c 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | 32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product |
m36dr432bd10za6t 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | 32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256Kb x16 SRAM, Multiple Memory Product |
m36dr432bd12za6t 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | 32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256Kb x16 SRAM, Multiple Memory Product |
m36dr432dza 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | 32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product |
m36dr432-zat 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | 32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product |
m36dr432a100za6t 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | 32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product |
m36dr432a120za6t 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | 32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product |
m36dr432ad 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | 32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256Kb x16 SRAM, Multiple Memory Product |
m36dr432aza 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | 32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product |
m36dr432ad85za6t 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | 32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256Kb x16 SRAM, Multiple Memory Product |
m36dr432ad12za6t 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | PS MEDICAL SWITCHING 5V 8A |
m36dr432ad10za6t 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | PS MEDICAL SWITCHING 24V 1.7A |
m36dr432a120za6c 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | 32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product |
m36dr432b100za6c 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | 32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product |
m36dr432a100za6c 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | 32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product |
m36dr432da85za6t 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | 32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product |
m36dr432da10za6t 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | 32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product |
m36dr432cza 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | 32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product |
m36dr432bd85za6t 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | 32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256Kb x16 SRAM, Multiple Memory Product |
m36dr432bd 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | 32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256Kb x16 SRAM, Multiple Memory Product |
m36dr432b120za6t 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | 32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product |
m36dr432b100za6t 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | 32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product |
m36dr432bdza 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | 32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256Kb x16 SRAM, Multiple Memory Product |
m36dr432b 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | 32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product |
m36l0r7050b0 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | 128 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory 32 Mbit (2M x16) PSRAM, 1.8V Supply Multi-Chip Package |
m36l0r7050b0zaq 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | 128 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory 32 Mbit (2M x16) PSRAM, 1.8V Supply Multi-Chip Package |
m36l0r7050t0 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | 128 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory 32 Mbit (2M x16) PSRAM, 1.8V Supply Multi-Chip Package |
m36l0r7050t0zaq 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | 128 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory 32 Mbit (2M x16) PSRAM, 1.8V Supply Multi-Chip Package |
m36l0r7050 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | 128 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory 32 Mbit (2M x16) PSRAM, 1.8V Supply Multi-Chip Package |
m36l0r8060 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | 128 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory 32 Mbit (2M x16) PSRAM, 1.8V Supply Multi-Chip Package |
m36l0t7050 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | 128 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory 32 Mbit (2M x16) PSRAM, 1.8V Supply Multi-Chip Package |
m36l0r7050b0zaqf 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | CAP 0.1UF 50V 10% X7R DIP-2 BULK P-MIL-C-39014 |
m36l0r7050b0zaqt 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | CAP 2.2PF 200V 0.5PF C0H DIP-2 BULK S-MIL-C-39014 |
m36l0r7050b0zaqe 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | ER 23C 16 12 8 4 SKT RECP WALL |
m36l0r7050t0zaqe 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | AB 6C 2#0 4#4 SKT RECP |
m36l0r7050t0zaqt 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | 128 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory 32 Mbit (2M x16) PSRAM, 1.8V Supply Multi-Chip Package |
m36l0r7050t0zaqf 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | 128 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory 32 Mbit (2M x16) PSRAM, 1.8V Supply Multi-Chip Package |
m36w108 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | 8 Mbit 1Mb x8, Boot Block Flash Memory and 1 Mbit 128Kb x8 SRAM Low Voltage Multi-Memory Product |
m36w108atzm 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | 8 Mbit 1Mb x8, Boot Block Flash Memory and 1 Mbit 128Kb x8 SRAM Low Voltage Multi-Memory Product |
m36w108atzn 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | 8 Mbit 1Mb x8, Boot Block Flash Memory and 1 Mbit 128Kb x8 SRAM Low Voltage Multi-Memory Product |
m36w108t120zn5t 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | Circular Connector; MIL SPEC:MIL-DTL-38999 Series III; Body Material:Metal; Series:TVPS00; Number of Contacts:26; Connector Shell Size:17; Connecting Termination:Crimp; Circular Shell Style:Wall Mount Receptacle; Body Style:Straight |
m36w108b120zn5t 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | Circular Connector; MIL SPEC:MIL-DTL-38999 Series III; Body Material:Metal; Series:TVPS00; No. of Contacts:26; Connector Shell Size:17; Connecting Termination:Crimp; Circular Shell Style:Wall Mount Receptacle; Body Style:Straight |
m36w108at100zn1t 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | Multiple Conductor Wire; Number of Conductors:8; Conductor Size AWG:24; No. Strands x Strand Size:Solid; Approval Categories:UL NEC/CUL,CEC; Leaded Process Compatible:Yes RoHS Compliant: Yes |
m36w108ab100zn1t 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | Paired Cable; Number of Conductors:8; Conductor Size AWG:24; No. Strands x Strand Size:Solid; Jacket Material:Polyvinylchloride (PVC); Number of Pairs:4; Leaded Process Compatible:Yes; Conductor Material:Copper; Jacket Color:Red RoHS Compliant: Yes |
m36w108at120zn1t 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | Paired Cable; Number of Conductors:8; Conductor Size AWG:24; No. Strands x Strand Size:Solid; Jacket Material:Polyvinylchloride (PVC); Number of Pairs:4; Leaded Process Compatible:Yes; Conductor Material:Copper; Jacket Color:Orange RoHS Compliant: Yes |
m36w108ab120zn1t 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | Paired Cable; Number of Conductors:8; Conductor Size AWG:24; No. Strands x Strand Size:Solid; Jacket Material:Polyvinylchloride (PVC); Number of Pairs:4; Leaded Process Compatible:Yes; Conductor Material:Copper; Jacket Color:Orange RoHS Compliant: Yes |
m36w108t100zn1t 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | Paired Cable; Number of Conductors:8; Conductor Size AWG:24; No. Strands x Strand Size:Solid; Jacket Material:Polyvinylchloride (PVC); Number of Pairs:4; Leaded Process Compatible:Yes; Jacket Color:Yellow; Outer Diameter:0.200" RoHS Compliant: Yes |
m36w108b100zn1t 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | Paired Cable; Number of Conductors:8; Conductor Size AWG:24; No. Strands x Strand Size:Solid; Jacket Material:Polyvinylchloride (PVC); Number of Pairs:4; Leaded Process Compatible:Yes; Conductor Material:Copper; Jacket Color:Green RoHS Compliant: Yes |