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參數(shù)資料
| 型號(hào)： | M36DR432CA10ZA6T |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product |
| 中文描述： | 32兆位的2Mb x16插槽，雙行，頁(yè)閃存和4兆位256K x16的SRAM，多個(gè)存儲(chǔ)產(chǎn)品 |
| 文件頁(yè)數(shù)： | 17/52頁(yè) |
| 文件大?。?/td> | 834K |
| 代理商： | M36DR432CA10ZA6T |
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M36DR432AD, M36DR432BD
protected Protection Register will result in a Status
Register error. The protection of the Protection
Register and/or the Security Block is not revers-
ible.
Table 4. Flash Commands
Note: X = Don’t Care, BA = Block Address, PA = Program address, PD = Program Data, CRD = Configuration Register Data. For Coded
cycles address inputs A12-A20 are don’t care.
Commands
N
Bus Operations
1st
2nd
3rd
4th
5th
6th
7th
Add
Data
Add
Data
Add
Data
Add
Data
Add
Data
Add
Data
Add
Data
Read/Reset
1+
X
F0h
Read Memory Array until a new write cycle is initiated.
3+ 555h
AAh 2AAh
55h
555h
F0h
Read Memory Array until a new write cycle is initiated.
CFI Query
1+
55h
98h
Read CFI and Electronic Signature until a Read/Reset command is issued.
Auto Select
3+ 555h
AAh 2AAh
55h
555h
90h
Read Protection Register, Block Protection or
Configuration Register Status until a Read/Reset
command is issued.
Set Configuration
Register
4 555h
AAh 2AAh
55h
555h 60h
CRD
03h
Program
4 555h
AAh 2AAh
55h
555h A0h
PA
PD
Read Data Polling or Toggle Bit until
Program completes.
Double Word
Program
5 555h
AAh 2AAh
55h
555h 40h
PA1
PD1
PA2
PD2
Quadruple Word
Program
5 555h
AAh 2AAh
55h
555h 50h
PA1
PD1
PA2
PD2
PA3
PD3
PA4
PD4
Enter Bypass
Mode
3 555h
AAh 2AAh
55h
555h 20h
Exit Bypass
Mode
2
X
90h
X
00h
Program in
Bypass Mode
2
X
A0h
PA
PD
Read Data Polling or Toggle Bit until Program completes.
Double Word
Program in
Bypass Mode
3
X
40h
PA1
PD1
PA2
PD2
Quadruple Word
Program in
Bypass Mode
3
X
50h
PA1
PD1
PA2
PD2
PA3
PD3
PA4
PD4
Block Lock
4 555h
AAh 2AAh
55h
555h
60h
BA
01h
Block Unlock
4 555h
AAh 2AAh
55h
555h
60h
BA
D0h
Block Lock-Down
4 555h
AAh 2AAh
55h
555h
60h
BA
2Fh
Block Erase
6+ 555h
AAh 2AAh
55h
555h
80h
555h
AAh
2AAh
55h
BA
30h
Bank Erase
6 555h
AAh 2AAh
55h
555h
80h
555h
AAh
2AAh
55h
BA
10h
Erase Suspend
1
X
B0h
Read until Toggle stops, then read all the data needed from any Blocks not being
erased then Resume Erase.
Erase Resume
1
BA
30h
Read Data Polling or Toggle Bits until Erase completes or Erase is suspended
another time
Protection
Register Program
4 555h
AAh 2AAh
55h
PA
C0h
PA
PD
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M36DR432CA85ZA6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product |
| M36DR432CZA | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product |
| M36DR432D | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product |
| M36DR432DA10ZA6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product |
| M36DR432DA85ZA6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product |
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