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參數(shù)資料
| 型號(hào)： | M36DR432CZA |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product |
| 中文描述： | 32兆位的2Mb x16插槽，雙行，頁(yè)閃存和4兆位256K x16的SRAM，多個(gè)存儲(chǔ)產(chǎn)品 |
| 文件頁(yè)數(shù)： | 28/52頁(yè) |
| 文件大小： | 834K |
| 代理商： | M36DR432CZA |
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M36DR432AD, M36DR432BD
28/52
Table 17. SRAM DC Characteristics
(T
A
= –40 to 85°C; V
DDF
= V
DDS
= 1.65V to 2.2V)
Symbol
Parameter
Output Leakage
Current
I
IX
Input Load Current
Note: 1.
I
DDES
and
I
DDWS
are specified with device deselected. If device is read while in erase suspend, current draw is sum of
I
DDES
and
I
DDR.
If the device is read while in program suspend, current draw is the sum of
I
DDWS
and
I
DDR
.
2. V
IN
= V
IL
or V
IH
Test Condition
Min
Typ
Max
Unit
I
OZ
0V
≤
V
OUT
≤
V
DDS,
output disabled
-1
+1
+1
μA
0V
≤
V
IN
≤
V
DDS
-1
±1
+1
μA
I
DDS
V
DD
Standby
Current
ES
≥
V
DDS
– 0.2V, V
IN
≥
V
DDS
– 0.2V
or V
IN
≤
0.2V, f=0
V
DDS
= 2.2V
I
OUT
= 0 mA, f = f
MAX
= 1/t
RC
, CMOS levels
V
DDS
= 2.2V
I
OUT
= 0 mA, f = 0Hz
CMOS levels
V
DDS
= 1.65V
V
DDS
= 2.2V
V
DDS
= 1.65V
I
OL
= 0.1μA
V
DDS
= 1.65V
I
OH
= –0.1μA
1
10
μA
I
DD
Supply Current
4
7
mA
1
5
mA
V
IL
V
IH
Input Low Voltage
–0.5
0.4
V
Input High Voltage
1.4
V
DDS
+0.2V
V
V
OL
Output Low Voltage
0.2
V
V
OH
Output High Voltage
1.4
V
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M36DR432D | 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product |
| M36DR432DA10ZA6T | 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product |
| M36DR432DA85ZA6T | 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product |
| M36DR432DZA | 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product |
| M36DR432-ZAT | 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product |
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