參數資料
型號： M36DR432DZA
廠商： 意法半導體
英文描述： 32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product
中文描述： 32兆位的2Mb x16插槽，雙行，頁閃存和4兆位256K x16的SRAM，多個存儲產品
文件頁數： 26/52頁
文件大?。?/td> 834K
代理商： M36DR432DZA
M36DR432AD, M36DR432BD
26/52
DC AND AC PARAMETERS
This section summarizes the operating measure-
ment conditions, and the DC and AC characteris-
tics of the device. The parameters in the DC and
AC characteristics Tables that follow, are derived
from tests performed under the Measurement
Conditions summarized in Table 14, Operating
and AC Measurement Conditions. Designers
should check that the operating conditions in their
circuit match the operating conditions when rely-
ing on the quoted parameters.
Table 14. Operating and AC Measurement Conditions
Note: 1. V
DD
= V
DDS
= V
DDF
Figure 6. AC Measurement I/O Waveform
Note: V
DD
means V
DDF
= V
DDS
Figure 7. AC Measurement Load Circuit
Note: V
DD
means V
DDF
= V
DDS
Table 15. Device Capacitance
Symbol
Note: Sampled only, not 100% tested.
SRAM
Flash
Parameter
70
85
100, 120
Units
Min
Max
Min
Max
Min
Max
V
DDF
Supply Voltage
-
-
1.8
2.2
1.65
2.2
V
V
DDS
Supply Voltage
1.65
2.2
-
-
-
-
V
V
PPF
Supply Voltage
11.4
12.6
11.4
12.6
V
Ambient Operating Temperature
– 40
85
– 40
85
– 40
85
°C
Load Capacitance (C
L
)
30
5
30
30
pF
Input Rise and Fall Times
2
4
4
ns
Input Pulse Voltages
(1)
0 to V
DD
0 to V
DD
0 to V
DD
V
Input and Output Timing Ref. Voltages
(1)
V
DD
/2
V
DD
/2
V
DD
/2
V
AI90206
VDD
0V
VDD/2
AI90207
CL = 50pF
CL includes JIG capacitance
DEVICE
UNDER
TEST
25k
VDD
25k
VDD
0.1μF
Parameter
Test Condition
Min
Max
Unit
C
IN
Input Capacitance
V
IN
= 0V
12
pF
C
OUT
Output Capacitance
V
OUT
= 0V
15
pF
相關PDF資料
PDF描述
M36DR432-ZAT 32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product
M36DR432A100ZA6T 32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product
M36DR432A120ZA6T 32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product
M36DR432AD 32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256Kb x16 SRAM, Multiple Memory Product
M36DR432AZA 32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product
相關代理商/技術參數
參數描述
M36DR432-ZAT 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product
M36DR864CB85ZA6 功能描述:閃存 64M (4Mx16) 85ns RoHS:否 制造商:ON Semiconductor 數據總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結構:256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel
M36DR864CB85ZA6T 功能描述:閃存 64M (4Mx16) 85ns RoHS:否 制造商:ON Semiconductor 數據總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結構:256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel
M36JGK90X 制造商:Panasonic Industrial Company 功能描述:CRT
M36KPC000X01 制造商:Panasonic Industrial Company 功能描述:CRT
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