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| 型號(hào)： | M36L0R7050B0ZAQF |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | CAP 0.1UF 50V 10% X7R DIP-2 BULK P-MIL-C-39014 |
| 中文描述： | 128兆位（多銀行，多層次，突發(fā)）閃存32兆位（200萬(wàn)× 16）移動(dòng)存儲(chǔ)芯片，1.8V電源多芯片封裝 |
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| 文件大小： | 406K |
| 代理商： | M36L0R7050B0ZAQF |
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M36L0R7050T0, M36L0R7050B0
Table 7. Flash Memory DC Characteristics - Currents
Note: 1. Sampled only, not 100% tested.
2. V
DDF
Dual Operation current is the sum of read and program or erase currents.
Symbol
Parameter
Test Condition
Min
Typ
Max
Unit
I
LI
Input Leakage Current
0V
≤
V
IN
≤
V
DDQ
±1
μA
I
LO
Output Leakage Current
0V
≤
V
OUT
≤
V
DDQ
±1
μA
I
DD1
Supply Current
Asynchronous Read (f=6MHz)
E
F
= V
IL
, G
F
= V
IH
10
15
mA
Supply Current
Synchronous Read (f=40MHz)
4 Word
7
16
mA
8 Word
10
18
mA
16 Word
13
20
mA
Continuous
18
25
mA
Supply Current
Synchronous Read (f=54MHz)
4 Word
16
18
mA
8 Word
18
20
mA
16 Word
21
25
mA
Continuous
22
27
mA
I
DD2
Supply Current
(Reset)
RP
F
= V
SS
± 0.2V
25
70
μA
I
DD3
Supply Current (Standby)
E
F
= V
DDF
± 0.2V
25
70
μA
I
DD4
Supply Current (Automatic
Standby)
E
F
= V
IL
, G
F
= V
IH
25
70
μA
I
DD5
(1)
Supply Current (Program)
V
PPF
= V
PPH
8
15
mA
V
PPF
= V
DDF
10
20
mA
Supply Current (Erase)
V
PPF
= V
PPH
8
15
mA
V
PPF
= V
DDF
10
20
mA
I
DD6 (1,2)
Supply Current
(Dual Operations)
Program/Erase in one
Bank, Asynchronous
Read in another Bank
20
35
mA
Program/Erase in one
Bank, Synchronous
Read in another Bank
32
47
mA
I
DD7(1)
Supply Current Program/ Erase
Suspended (Standby)
E
F
= V
DDF
± 0.2V
25
70
μA
I
PP1(1)
V
PPF
Supply Current (Program)
V
PPF
= V
PPH
2
5
mA
V
PPF
= V
DDF
0.2
5
μA
V
PPF
Supply Current (Erase)
V
PPF
= V
PPH
2
5
mA
V
PPF
= V
DDF
0.2
5
μA
I
PP2
V
PPF
Supply Current (Read)
V
PPF
≤
V
DDF
0.2
5
μA
I
PP3(1)
V
PPF
Supply Current (Standby)
V
PPF
≤
V
DDF
0.2
5
μA
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M36L0R7050B0ZAQT | CAP 2.2PF 200V 0.5PF C0H DIP-2 BULK S-MIL-C-39014 |
| M36L0R7050B0ZAQE | ER 23C 16 12 8 4 SKT RECP WALL |
| M36L0R7050T0ZAQE | AB 6C 2#0 4#4 SKT RECP |
| M36L0R7050T0ZAQT | 128 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory 32 Mbit (2M x16) PSRAM, 1.8V Supply Multi-Chip Package |
| M36L0R7050T0ZAQF | 128 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory 32 Mbit (2M x16) PSRAM, 1.8V Supply Multi-Chip Package |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M36L0R7050B0ZAQT | 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:128 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory 32 Mbit (2M x16) PSRAM, 1.8V Supply Multi-Chip Package |
| M36L0R7050B1ZAQE | 制造商:Micron Technology Inc 功能描述:128M (8MX16) FLASH, 32M PSRAM, 1.8V, TFBGA88, IND, HAZMAT - Trays |
| M36L0R7050B3ZAQE | 制造商:Micron Technology Inc 功能描述:WIRELESS - Trays |
| M36L0R7050B3ZAQF | 制造商:Micron Technology Inc 功能描述:WIRELESS - Tape and Reel |
| M36L0R7050B4ZAQE | 制造商:Micron Technology Inc 功能描述:WIRELESS - Trays 制造商:Micron Technology Inc 功能描述:MICM36L0R7050B4ZAQE WIRELESS 制造商:Micron Technology Inc 功能描述:IC FLASH PSRAM 160M |
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