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參數(shù)資料
| 型號(hào)： | M36L0T7050T0ZAQF |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 128Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory 32Mbit (2M x16) PSRAM, Multi-Chip Package |
| 中文描述： | 128Mbit（多銀行，多層次，突發(fā)）閃存32兆（2米× 16）移動(dòng)存儲(chǔ)芯片，多芯片封裝 |
| 文件頁(yè)數(shù)： | 16/18頁(yè) |
| 文件大?。?/td> | 361K |
| 代理商： | M36L0T7050T0ZAQF |
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M36L0T7050T0, M36L0T7050B0
fast read/write cycles to be achieved with the com-
mon I/O data bus.
Write Enable (WP). The Write Enable, WP, con-
trols the Bus Write operation of the memory.
Upper Byte Enable (UBP). The Upper Byte En-
able, UBP, gates the data on the Upper Byte Data
Inputs/Outputs (DQ8-DQ15) to or from the upper
part of the selected address during a Write or
Read operation.
Lower Byte Enable (LBP
able, LBP, gates the data on the Lower Byte Data
Inputs/Outputs (DQ0-DQ7) to or from the lower
part of the selected address during a Write or
Read operation.
VDDF Supply Voltage. VDDF provides the power
supply to the internal cores of the Flash memory
component. It is the main power supply for all
Flash operations (Read, Program and Erase).
VDDP Supply Voltage. The VDDP Supply Volt-
age supplies the power for all operations (Read,
Write, etc.) and for driving the refresh logic, even
when the device is not being accessed.
VDDQ Supply Voltage. VDDQ provides the power
supply for the Flash Memory I/O pins. This allows
all Outputs to be powered independently of the
Flash Memory core power supply, VDDF.
VPPF Program Supply Voltage. VPPF is both a
Flash control input and a Flash power supply pin.
The two functions are selected by the voltage
range applied to the pin.
If VPPF is kept in a low voltage range (0V to VDDQ)
VPPF is seen as a control input. In this case a volt-
age lower than VPPLKF gives an absolute protec-
tion against Program or Erase, while VPPF > VPP1F
Characteristics for the relevant values). VPPF is
only sampled at the beginning of a Program or
Erase; a change in its value after the operation has
started does not have any effect and Program or
Erase operations continue.
If VPPF is in the range of VPPHF it acts as a power
supply pin. In this condition VPPF must be stable
until the Program/Erase algorithm is completed.
VSS Ground. VSS is the common ground refer-
ence for all voltage measurements in the Flash
(core and I/O Buffers) and PSRAM chips.
Note: Each Flash memory device in a system
should have their supply voltage (VDDF1 and
VDDF2) and the program supply voltage VPPF
decoupled with a 0.1F ceramic capacitor
close to the pin (high frequency, inherently low
inductance capacitors should be as close as
possible to the package). See Figure 6., AC
Measurement Load Circuit. The PCB track
widths should be sufficient to carry the re-
quired VPPF program and erase currents.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M36L0T7050T0ZAQT | 128Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory 32Mbit (2M x16) PSRAM, Multi-Chip Package |
| M36L0T7050B0 | 128Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory 32Mbit (2M x16) PSRAM, Multi-Chip Package |
| M36L0T7050T0 | 128Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory 32Mbit (2M x16) PSRAM, Multi-Chip Package |
| M37534E8SP | SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER |
| M378T6453FZ3-CD5 | 64M X 64 DDR DRAM MODULE, 0.5 ns, DMA240 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M36L0T7050T0ZAQT | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory 32Mbit (2M x16) PSRAM, Multi-Chip Package |
| M36L0T7050T2 | 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:128 Mbit (Multiple Bank, Multi-Level, Burst) Flash memory and 32 Mbit (2Mb x16) PSRAM, Multi-Chip Package |
| M36L0T7050T2ZAQ | 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:128 Mbit (Multiple Bank, Multi-Level, Burst) Flash memory and 32 Mbit (2Mb x16) PSRAM, Multi-Chip Package |
| M36L0T7050T2ZAQE | 制造商:Micron Technology Inc 功能描述:WIRELESS - Trays |
| M36L0T7050T2ZAQF | 制造商:Micron Technology Inc 功能描述:WIRELESS - Tape and Reel |
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