參數(shù)資料
型號(hào)： M36L0T7050T0ZAQF
廠商： 意法半導(dǎo)體
英文描述： 128Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory 32Mbit (2M x16) PSRAM, Multi-Chip Package
中文描述： 128Mbit（多銀行，多層次，突發(fā)）閃存32兆（2米× 16）移動(dòng)存儲(chǔ)芯片，多芯片封裝
文件頁數(shù)： 4/18頁
文件大小： 361K
代理商： M36L0T7050T0ZAQF
M36L0T7050T0, M36L0T7050B0
12/18
DC AND AC PARAMETERS
This section summarizes the operating measure-
ment conditions, and the DC and AC characteris-
tics of the device. The parameters in the DC and
AC characteristics Tables that follow, are derived
from tests performed under the Measurement
Conditions summarized in Table 5., Operating and
AC Measurement Conditions. Designers should
check that the operating conditions in their circuit
match the operating conditions when relying on
the quoted parameters.
Table 5. Operating and AC Measurement Conditions
Figure 5. AC Measurement I/O Waveform
Figure 6. AC Measurement Load Circuit
Table 6. Device Capacitance
Note: Sampled only, not 100% tested.
Parameter
Flash Memory
PSRAM
Unit
Min
Max
Min
Max
VDDF Supply Voltage
1.7
2.0
–
V
VDDP Supply Voltage
––
2.7
3.3
V
VDDQF Supply Voltage
2.7
3.3
–
V
VPPF Supply Voltage (Factory environment)
8.5
12.6
–
V
VPPF Supply Voltage (Application
environment)
–0.4
VDDQ +0.4
––
V
Ambient Operating Temperature
–25
85
–30
85
°C
Load Capacitance (CL)
30
50
pF
Output Circuit Resistors (R1, R2)
22
k
Input Rise and Fall Times
5
ns
Input Pulse Voltages
0 to VDDQ
V
Input and Output Timing Ref. Voltages
VDDQ/2
V
AI06161
VDDQ
0V
VDDQ/2
AI08364B
VDDQ
CL
CL includes JIG capacitance
R1
DEVICE
UNDER
TEST
0.1F
VDDQ
R2
0.1F
VDDF
Symbol
Parameter
Test Condition
Min
Max
Unit
CIN
Input Capacitance
VIN = 0V
12
pF
COUT
Output Capacitance
VOUT = 0V
15
pF
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M36L0T7050T0ZAQT 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory 32Mbit (2M x16) PSRAM, Multi-Chip Package
M36L0T7050T2 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:128 Mbit (Multiple Bank, Multi-Level, Burst) Flash memory and 32 Mbit (2Mb x16) PSRAM, Multi-Chip Package
M36L0T7050T2ZAQ 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:128 Mbit (Multiple Bank, Multi-Level, Burst) Flash memory and 32 Mbit (2Mb x16) PSRAM, Multi-Chip Package
M36L0T7050T2ZAQE 制造商:Micron Technology Inc 功能描述:WIRELESS - Trays
M36L0T7050T2ZAQF 制造商:Micron Technology Inc 功能描述:WIRELESS - Tape and Reel
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