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參數(shù)資料
| 型號： | M36W0R6030B0ZAQ |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 8 Mbit (512Kb x16) SRAM, Multi-Chip Package |
| 中文描述： | 64兆位（4Mb的x16插槽，多銀行，突發(fā)）閃存和8兆位（512KB的× 16）的SRAM，多芯片封裝 |
| 文件頁數(shù)： | 21/26頁 |
| 文件大?。?/td> | 168K |
| 代理商： | M36W0R6030B0ZAQ |
21/26
M36W0R6030T0, M36W0R6030B0
Table 10. Write AC Characteristics
Note: 1. Whatever the temperature and voltage, t
WLDZ
is less than t
WHDX
.
Symbol
Alt
Parameter
M36W0R6030T0, M36W0R6030B0
Unit
Min
Max
t
AVAV
t
WC
Write Cycle Time
70
ns
t
AVE1L
,
t
AVE2H
,
t
AVWL
t
AVBL
t
SA
Address Valid to Beginning of Write
0
ns
t
AVWH
t
AVE1H
t
AVE2L
t
AVBH
t
AW
Address Valid to Write Enable High
60
ns
t
BLWH
t
BLE1H
t
BLE2L
t
BLBH
t
BW
UB
S
, LB
S
Valid to End of Write
60
ns
t
DVE1H
,
t
DVE2L
,
t
DVWH
t
DVBH
t
SD
Input Valid to End of Write
30
ns
t
E1HAX
,
t
E2LAX
,
t
WHAX
t
BHAX
t
HA
End of Write to Address Change
0
ns
t
E1HDX
,
t
E2LDX
,
t
WHDX
t
BHDX
t
HD
Data Transition to End of Write
0
ns
t
E1LE1H
,
t
E2HE2L
,
t
E1LWH
t
E2HWH
t
E1LBH
,
t
E2HBH
t
SCE
Chip Enable 1 Low or Chip Enable 2 High to
End of Write
60
ns
t
GHDZ
t
HZOE
Output Enable High to Output Hi-Z
25
ns
t
WHDZ(1)
t
LZWE
Write Enable High to Input Transition
10
ns
t
WLDZ(1)
t
HZWE
Write Enable Low to Output Hi-Z
25
ns
t
WLWH
t
WLE1H
t
WLE2L
t
WLBH
t
PWE
Write Enable Pulse Width
50
ns
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M36W0R6030B0ZAQE | 64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 8 Mbit (512Kb x16) SRAM, Multi-Chip Package |
| M36W0R6030B0ZAQF | 64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 8 Mbit (512Kb x16) SRAM, Multi-Chip Package |
| M36W0R6030B0ZAQT | 64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 8 Mbit (512Kb x16) SRAM, Multi-Chip Package |
| M36W0R6030T0 | 64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 8 Mbit (512Kb x16) SRAM, Multi-Chip Package |
| M36W0R6030T0ZAQ | 64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 8 Mbit (512Kb x16) SRAM, Multi-Chip Package |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M36W0R6030B0ZAQE | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 8 Mbit (512Kb x16) SRAM, Multi-Chip Package |
| M36W0R6030B0ZAQF | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 8 Mbit (512Kb x16) SRAM, Multi-Chip Package |
| M36W0R6030B0ZAQT | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 8 Mbit (512Kb x16) SRAM, Multi-Chip Package |
| M36W0R6030T0 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 8 Mbit (512Kb x16) SRAM, Multi-Chip Package |
| M36W0R6030T0ZAQ | 制造商:Micron Technology Inc 功能描述: |
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