- 您現(xiàn)在的位置：買(mǎi)賣(mài)IC網(wǎng) > PDF目錄377825 > M36W0R6030B0ZAQE (意法半導(dǎo)體) 64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 8 Mbit (512Kb x16) SRAM, Multi-Chip Package PDF資料下載
參數(shù)資料
| 型號(hào)： | M36W0R6030B0ZAQE |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 8 Mbit (512Kb x16) SRAM, Multi-Chip Package |
| 中文描述： | 64兆位（4Mb的x16插槽，多銀行，突發(fā)）閃存和8兆位（512KB的× 16）的SRAM，多芯片封裝 |
| 文件頁(yè)數(shù)： | 20/26頁(yè) |
| 文件大小： | 168K |
| 代理商： | M36W0R6030B0ZAQE |
第1頁(yè)第2頁(yè)第3頁(yè)第4頁(yè)第5頁(yè)第6頁(yè)第7頁(yè)第8頁(yè)第9頁(yè)第10頁(yè)第11頁(yè)第12頁(yè)第13頁(yè)第14頁(yè)第15頁(yè)第16頁(yè)第17頁(yè)第18頁(yè)第19頁(yè)當(dāng)前第20頁(yè)第21頁(yè)第22頁(yè)第23頁(yè)第24頁(yè)第25頁(yè)第26頁(yè)
M36W0R6030T0, M36W0R6030B0
20/26
Figure 13. Write AC Waveforms, W
S
Controlled with G
S
Low
Note: 1. During this period, the I/O pins are in output mode and input signals should not be applied.
2. If E1
S
, E2
S
and W
S
are deasserted at the same time, DQ0-DQ15 remain high impedance.
3. UB
S
, LB
S
means both UB
S
and LB
S
.
Figure 14. Write AC Waveform, UB
S
and LB
S
Controlled G
S
Low
Note: 1. If E1
S
, E2
S
and W
S
are deasserted at the same time, DQ0-DQ15 remain high impedance.
2. The I/O pins are in output mode and input signals should not be applied.
3. UB
S
, LB
S
means both UB
S
and LB
S
.
AI08195B
tAVAV
tWHAX
tDVWH
INPUT VALID
A0-A18
E1
S
W
S
DQ0-DQ15
VALID
E2
S
tAVWH
tWLWH
tAVWL
tWHDZ
tWHDX
tBLWH
UB
S
, LB
S
tE1LWH
tE2HWH
tWLDZ
Note 1
AI08196B
tAVAV
tBHAX
tDVBH
INPUT VALID
A0-A18
E1
S
W
S
DQ0-DQ15
VALID
E2
S
tAVBH
tWLBH
tAVBL
tBHDX
tBLBH
UB
S
, LB
S
tE1LBH
tE2HBH
Note 2
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M36W0R6030B0ZAQF | 64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 8 Mbit (512Kb x16) SRAM, Multi-Chip Package |
| M36W0R6030B0ZAQT | 64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 8 Mbit (512Kb x16) SRAM, Multi-Chip Package |
| M36W0R6030T0 | 64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 8 Mbit (512Kb x16) SRAM, Multi-Chip Package |
| M36W0R6030T0ZAQ | 64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 8 Mbit (512Kb x16) SRAM, Multi-Chip Package |
| M36W0R6030T0ZAQE | 64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 8 Mbit (512Kb x16) SRAM, Multi-Chip Package |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M36W0R6030B0ZAQF | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 8 Mbit (512Kb x16) SRAM, Multi-Chip Package |
| M36W0R6030B0ZAQT | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 8 Mbit (512Kb x16) SRAM, Multi-Chip Package |
| M36W0R6030T0 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 8 Mbit (512Kb x16) SRAM, Multi-Chip Package |
| M36W0R6030T0ZAQ | 制造商:Micron Technology Inc 功能描述: |
| M36W0R6030T0ZAQE | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 8 Mbit (512Kb x16) SRAM, Multi-Chip Package |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。