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參數(shù)資料
| 型號： | M36W0R6030B0ZAQE |
| 廠商： | 意法半導體 |
| 英文描述： | 64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 8 Mbit (512Kb x16) SRAM, Multi-Chip Package |
| 中文描述： | 64兆位（4Mb的x16插槽，多銀行，突發(fā)）閃存和8兆位（512KB的× 16）的SRAM，多芯片封裝 |
| 文件頁數(shù)： | 4/26頁 |
| 文件大?。?/td> | 168K |
| 代理商： | M36W0R6030B0ZAQE |
M36W0R6030T0, M36W0R6030B0
4/26
SUMMARY DESCRIPTION
The M36W0R6030T0 and M36W0R6030B0 com-
bine two memory devices in a Multi-Chip Package:
a 64-Mbit, Multiple Bank Flash memory, the
M58WR064FT/B, and an 8-Mbit SRAM. Recom-
mended operating conditions do not allow more
than one memory to be active at the same time.
The memory is offered in a Stacked TFBGA88
(8 x 10mm, 8x10 ball array, 0.8mm pitch) pack-
age.
In addition to the standard version, the packages
are also available in Lead-free version, in compli-
ance with JEDEC Std J-STD-020B, the ST ECO-
PACK 7191395 Specification, and the RoHS
(Restriction of Hazardous Substances) directive.
All packages are compliant with Lead-free solder-
ing processes.
is supplied with all the bits erased (set to ‘1’).
Figure 2. Logic Diagram
Table 1. Signal Names
Note: 1. A21-A19 are not connected to the SRAM component.
AI08534C
22
A0-A21
DQ0-DQ15
M36W0R6030T
M36W0R6030B
G
F
16
W
F
RP
F
WP
F
E1
S
G
S
W
S
UB
S
LB
S
VSS
V
DDF
V
PPF
V
DDS
WAIT
F
L
F
K
F
V
DDQ
E
F
E2
S
A0-A21
(1)
Address Inputs
DQ0-DQ15
Common Data Input/Output
V
DDF
Flash Memory Power Supply
V
DDQ
Common Flash and SRAM Power
Supply for I/O Buffers
V
PPF
Common Flash Optional Supply
Voltage for Fast Program and Erase
V
SS
Ground
V
DDS
SRAM Power Supply
NC
Not Connected Internally
DU
Do Not Use as Internally Connected
Flash Memory Signals
L
F
Latch Enable input
E
F
Chip Enable input
G
F
Output Enable input
W
F
Write Enable input
RP
F
Reset input
WP
F
Write Protect input
K
F
Burst Clock
WAIT
F
Wait Data in Burst Mode
SRAM Signals
E1
S
, E2
S
Chip Enable input
G
S
Output Enable input
W
S
Write Enable input
UB
S
Upper Byte Enable input
LB
S
Lower Byte Enable input
相關PDF資料 |
PDF描述 |
|---|---|
| M36W0R6030B0ZAQF | 64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 8 Mbit (512Kb x16) SRAM, Multi-Chip Package |
| M36W0R6030B0ZAQT | 64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 8 Mbit (512Kb x16) SRAM, Multi-Chip Package |
| M36W0R6030T0 | 64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 8 Mbit (512Kb x16) SRAM, Multi-Chip Package |
| M36W0R6030T0ZAQ | 64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 8 Mbit (512Kb x16) SRAM, Multi-Chip Package |
| M36W0R6030T0ZAQE | 64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 8 Mbit (512Kb x16) SRAM, Multi-Chip Package |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| M36W0R6030B0ZAQF | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 8 Mbit (512Kb x16) SRAM, Multi-Chip Package |
| M36W0R6030B0ZAQT | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 8 Mbit (512Kb x16) SRAM, Multi-Chip Package |
| M36W0R6030T0 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 8 Mbit (512Kb x16) SRAM, Multi-Chip Package |
| M36W0R6030T0ZAQ | 制造商:Micron Technology Inc 功能描述: |
| M36W0R6030T0ZAQE | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 8 Mbit (512Kb x16) SRAM, Multi-Chip Package |
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