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參數(shù)資料
| 型號： | M36W0R6030T0 |
| 廠商： | 意法半導體 |
| 英文描述： | 64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 8 Mbit (512Kb x16) SRAM, Multi-Chip Package |
| 中文描述： | 64兆位（4Mb的x16插槽，多銀行，突發(fā)）閃存和8兆位（512KB的× 16）的SRAM，多芯片封裝 |
| 文件頁數(shù)： | 25/26頁 |
| 文件大小： | 168K |
| 代理商： | M36W0R6030T0 |
25/26
M36W0R6030T0, M36W0R6030B0
REVISION HISTORY
Table 14. Document Revision History
Date
Version
Revision Details
03-Jul-2003
1.0
First Issue
12-Nov-2003
2.0
Part numbers M36W0R6020T0 and M36W0R6020T0 removed (4Mb SRAM part
removed), Figures
2
,
4
and
5
modified accordingly.
0.15μm SRAM technology upgraded with new 0.13μm technology (see
Table
13., Ordering Information Scheme
).
Flash memory device M30W0T6000(T/B)0 replaced by the M58WR064E(T/B).
Product promoted from Product Preview to Preliminary Data.
28-Jul-2004
3.0
0.15μm Flash memory technology replaced by 0.13μm technology (M58WR064ET/B
replaced by M58WR064FT/B,
Table 6., Flash Memory DC Characteristics - Currents
and
Table 7., Flash Memory DC Characteristics - Voltages
updated accordingly).
Package specifications (
Table 12.
) updated and E and F lead-free options added to
Table 13., Ordering Information Scheme
.
10-Dec-2004
4.0
Document status promoted from Preliminary Data to full Datasheet.
I
DD6
parameter for Program/Erase in one Bank, Synchronous Read in another Bank
modified in
Table 6., Flash Memory DC Characteristics - Currents
. V
DDQ
max
modified in
Table 3., Absolute Maximum Ratings
.
TFBGA88 package fully compliant with the ST ECOPACK specification.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M36W0R6030T0ZAQ | 64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 8 Mbit (512Kb x16) SRAM, Multi-Chip Package |
| M36W0R6030T0ZAQE | 64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 8 Mbit (512Kb x16) SRAM, Multi-Chip Package |
| M36W0R6030T0ZAQF | 64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 8 Mbit (512Kb x16) SRAM, Multi-Chip Package |
| M36W0R6030T0ZAQT | 64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 8 Mbit (512Kb x16) SRAM, Multi-Chip Package |
| M36W0R6050B1 | 64 Mbit (4 Mb 】16, Multiple Bank, Burst) Flash memory and 32 Mbit (2 Mb 】16) PSRAM, multi-chip package |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M36W0R6030T0ZAQ | 制造商:Micron Technology Inc 功能描述: |
| M36W0R6030T0ZAQE | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 8 Mbit (512Kb x16) SRAM, Multi-Chip Package |
| M36W0R6030T0ZAQF | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 8 Mbit (512Kb x16) SRAM, Multi-Chip Package |
| M36W0R6030T0ZAQT | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 8 Mbit (512Kb x16) SRAM, Multi-Chip Package |
| M36W0R604040B0ZAQE | 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:64 Mbit (4 Mb 】16, Multiple Bank, Burst) Flash memory and 16 Mbit (1 Mb 】16) PSRAM, multi-chip package |
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