參數(shù)資料
型號(hào)： M36W0R6050B1
廠商： 意法半導(dǎo)體
英文描述： 64 Mbit (4 Mb 】16, Multiple Bank, Burst) Flash memory and 32 Mbit (2 Mb 】16) PSRAM, multi-chip package
中文描述： 64兆位（4兆】16日，多銀行，突發(fā)）閃存和32兆位（2字節(jié)】16）移動(dòng)存儲(chǔ)芯片，多芯片封裝
文件頁(yè)數(shù)： 1/22頁(yè)
文件大?。?/td> 159K
代理商： M36W0R6050B1
January 2007
1
1/22
1
M36W0R6050T1
M36W0R6050B1
64 Mbit (4 Mb ×16, Multiple Bank, Burst) Flash memory
and 32 Mbit (2 Mb ×16) PSRAM, multi-chip package
Features
■
Multi-Chip Package
– 1 die of 64 Mbit (4 Mb × 16) Flash memory
– 1 die of 32 Mbit (2 Mb × 16) Pseudo SRAM
■
Supply voltage
– V
DDF
= V
DDP
= V
DDQF
= 1.7 V to 1.95 V
■
Low power consumption
■
Electronic signature
– Manufacturer Code: 20h
– Device code (top flash configuration),
M36W0R6050T1: 8810h
– Device code (bottom flash configuration),
M36W0R6050B1: 8811h
■
Package
– ECOPACK
Flash memory
■
Programming time
– 8 μs by Word typical for Fast Factory
Program
– Double/Quadruple Word Program option
– Enhanced Factory Program options
■
Memory blocks
– Multiple Bank memory array: 4 Mbit Banks
– Parameter Blocks (Top or Bottom location)
■
Synchronous / Asynchronous Read
– Synchronous Burst Read mode: 66 MHz
– Asynchronous/ Synchronous Page Read
mode
– Random Access: 70 ns
■
Dual operations
– Program Erase in one Bank while Read in
others
– No delay between Read and Write
operations
■
Block locking
– All blocks locked at Power-up
– Any combination of blocks can be locked
– WP
F
for Block Lock-Down
■
Security
– 128-bit user programmable OTP cells
– 64-bit unique device number
■
Common Flash Interface (CFI)
■
100 000 program/erase cycles per block
PSRAM
■
Access time: 70 ns
■
Asynchronous Page Read
– Page size: 8 words
– First access within page: 70 ns
– Subsequent read within page: 20 ns
■
Three Power-down modes
– Deep Power-Down
– Partial Array Refresh of 4 Mbits
– Partial Array Refresh of 8 Mbits
FBGA
Stacked TFBGA88
(ZA)
www.st.com
相關(guān)PDF資料
PDF描述
M36W0R6050B1ZAQE 64 Mbit (4 Mb 】16, Multiple Bank, Burst) Flash memory and 32 Mbit (2 Mb 】16) PSRAM, multi-chip package
M36W0R6050B1ZAQF 64 Mbit (4 Mb 】16, Multiple Bank, Burst) Flash memory and 32 Mbit (2 Mb 】16) PSRAM, multi-chip package
M36W0R6050T1 64 Mbit (4 Mb 】16, Multiple Bank, Burst) Flash memory and 32 Mbit (2 Mb 】16) PSRAM, multi-chip package
M36W0R6050T1ZAQE 64 Mbit (4 Mb 】16, Multiple Bank, Burst) Flash memory and 32 Mbit (2 Mb 】16) PSRAM, multi-chip package
M36W0R6050T1ZAQF 64 Mbit (4 Mb 】16, Multiple Bank, Burst) Flash memory and 32 Mbit (2 Mb 】16) PSRAM, multi-chip package
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M36W0R6050B1ZAQE 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:64 Mbit (4 Mb 】16, Multiple Bank, Burst) Flash memory and 32 Mbit (2 Mb 】16) PSRAM, multi-chip package
M36W0R6050B1ZAQF 制造商:NUMONYX 制造商全稱(chēng):Numonyx B.V 功能描述:64 Mbit (4 Mb 】16, Multiple Bank, Burst) Flash memory and 32 Mbit (2 Mb 】16) PSRAM, multi-chip package
M36W0R6050B3 制造商:NUMONYX 制造商全稱(chēng):Numonyx B.V 功能描述:64-Mbit (4 Mbits 】16, multiple bank, burst) Flash memory and 16-Mbit (1 Mbit 】16) or 32-Mbit (2 Mbits x16) PSRAM MCP
M36W0R6050B3ZAQE 制造商:NUMONYX 制造商全稱(chēng):Numonyx B.V 功能描述:64-Mbit (4 Mbits 】16, multiple bank, burst) Flash memory and 16-Mbit (1 Mbit 】16) or 32-Mbit (2 Mbits x16) PSRAM MCP
M36W0R6050B3ZAQF 制造商:NUMONYX 制造商全稱(chēng):Numonyx B.V 功能描述:64-Mbit (4 Mbits 】16, multiple bank, burst) Flash memory and 16-Mbit (1 Mbit 】16) or 32-Mbit (2 Mbits x16) PSRAM MCP
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