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參數(shù)資料
| 型號： | M36W108 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 8 Mbit 1Mb x8, Boot Block Flash Memory and 1 Mbit 128Kb x8 SRAM Low Voltage Multi-Memory Product |
| 中文描述： | 8兆1兆× 8，啟動塊閃存和1兆位128KB的x8 SRAM的低電壓多媒體存儲產(chǎn)品 |
| 文件頁數(shù)： | 26/35頁 |
| 文件大?。?/td> | 247K |
| 代理商： | M36W108 |
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M36W108T, M36W108B
26/35
Table 21. SRAM Read AC Characteristics
(T
A
= 0 to 70 °C, –20 to 85 °C or –40 to 85 °C; V
CCS
= 2.7 V to 3.6 V)
Note: 1. Sampled only. Not 100% tested.
2. See Flash-SRAM Switching Waveforms.
Symbol
Parameter
SRAM Chip
Unit
100
C
L
= 100pF
Min
Max
t
AVAV
Read Cycle Time
100
ns
t
AVQV
Address Valid to Output Valid
100
ns
t
E1LQV
Chip Enable 1 Low to Output Valid
100
ns
t
E2HQV
Chip Enable 2 High to Output Valid
100
ns
t
GLQV
Output Enable Low to Output Valid
50
ns
t
E1LQX
Chip Enable 1 Low to Output Transition
10
ns
t
E2HQX
Chip Enable 2 High to Output Transition
10
ns
t
GLQX
Output Enable Low to Output Transition
5
ns
t
E1HQZ
Chip Enable 1 High to Output Hi-Z
0
30
ns
t
E2LQZ
Chip Enable 2 Low to Output Hi-Z
0
30
ns
t
GHQZ
Output Enable High to Output Hi-Z
0
30
ns
t
AXQX
Address Transition to Output Transition
15
ns
t
PU (1)
Chip Enable 1 Low or Chip Enable 2 High to Power Up
0
ns
t
PD (1)
Chip Enable 1 High or Chip Enable 2 Low to Power Down
100
ns
t
CCR (2)
Chip Enable Recovery Time
0
ns
Figure 14. SRAM Read Mode AC Waveforms, Address Controlled
Note: E1S = Low, E2S = High, G = Low, W = High.
AI02436
tAVAV
tAVQV
tAXQX
A0-A16
DQ0-DQ7
VALID
DATA VALID
DATA VALID
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M36W108ATZM | 8 Mbit 1Mb x8, Boot Block Flash Memory and 1 Mbit 128Kb x8 SRAM Low Voltage Multi-Memory Product |
| M36W108ATZN | 8 Mbit 1Mb x8, Boot Block Flash Memory and 1 Mbit 128Kb x8 SRAM Low Voltage Multi-Memory Product |
| M36W108T120ZN5T | Circular Connector; MIL SPEC:MIL-DTL-38999 Series III; Body Material:Metal; Series:TVPS00; Number of Contacts:26; Connector Shell Size:17; Connecting Termination:Crimp; Circular Shell Style:Wall Mount Receptacle; Body Style:Straight |
| M36W108B120ZN5T | Circular Connector; MIL SPEC:MIL-DTL-38999 Series III; Body Material:Metal; Series:TVPS00; No. of Contacts:26; Connector Shell Size:17; Connecting Termination:Crimp; Circular Shell Style:Wall Mount Receptacle; Body Style:Straight |
| M36W108AT100ZN1T | Multiple Conductor Wire; Number of Conductors:8; Conductor Size AWG:24; No. Strands x Strand Size:Solid; Approval Categories:UL NEC/CUL,CEC; Leaded Process Compatible:Yes RoHS Compliant: Yes |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M36W108AB | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit 1Mb x8, Boot Block Flash Memory and 1 Mbit 128Kb x8 SRAM Low Voltage Multi-Memory Product |
| M36W108AB100ZM1T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit 1Mb x8, Boot Block Flash Memory and 1 Mbit 128Kb x8 SRAM Low Voltage Multi-Memory Product |
| M36W108AB100ZM5T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit 1Mb x8, Boot Block Flash Memory and 1 Mbit 128Kb x8 SRAM Low Voltage Multi-Memory Product |
| M36W108AB100ZM6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit 1Mb x8, Boot Block Flash Memory and 1 Mbit 128Kb x8 SRAM Low Voltage Multi-Memory Product |
| M36W108AB100ZN1T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit 1Mb x8, Boot Block Flash Memory and 1 Mbit 128Kb x8 SRAM Low Voltage Multi-Memory Product |
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