參數資料
型號: M36W108AB100ZN1T
廠商: 意法半導體
英文描述: Paired Cable; Number of Conductors:8; Conductor Size AWG:24; No. Strands x Strand Size:Solid; Jacket Material:Polyvinylchloride (PVC); Number of Pairs:4; Leaded Process Compatible:Yes; Conductor Material:Copper; Jacket Color:Red RoHS Compliant: Yes
中文描述: 8兆1兆× 8,啟動塊閃存和1兆位128KB的x8 SRAM的低電壓多媒體存儲產品
文件頁數: 11/35頁
文件大?。?/td> 247K
代理商: M36W108AB100ZN1T
11/35
M36W108T, M36W108B
Table 10. Flash Status Register Bits
(1)
Note: 1.
Logic level ‘1’ is High, ‘0’ is Low. -0-1-0-0-0-1-1-1-0- represent bit value in successive Read operations.
DQ
Name
Logic Level
Definition
Note
7
Data
Polling
‘1’
Erase Complete or erase block
in Erase Suspend
Indicates the P/E.C. status, check during
Program or Erase, and on completion before
checking bits DQ5 for Program or Erase
Success.
‘0’
Erase On-going
DQ
Program Complete or data of
non erase block during Erase
Suspend
DQ
Program On-going
6
Toggle Bit
‘-1-0-1-0-1-0-1-’
Erase or Program On-going
Successive reads output complementary
data on DQ6 while Programming or Erase
operations are on-going. DQ6 remains at
constant level when P/E.C. operations are
completed or Erase Suspend is
acknowledged.
DQ
Program Complete
‘-1-1-1-1-1-1-1-’
Erase Complete or Erase
Suspend on currently
addressed block
5
Error Bit
‘1’
Program or Erase Error
This bit is set to ‘1’ in the case of
Programming or Erase failure.
‘0’
Program or Erase On-going
4
Reserved
3
Erase
Time Bit
‘1’
Erase Timeout Period Expired
P/E.C. Erase operation has started. Only
possible command entry is Erase Suspend
(ES).
‘0’
Erase Timeout Period
On-going
An additional block to be erased in parallel
can be entered to the P/E.C.
2
Toggle Bit
‘-1-0-1-0-1-0-1-’
Chip Erase, Erase or Erase
Suspend on the currently
addressed block.
Erase Error due to the
currently addressed block
(when DQ5 = ‘1’)
Indicates the erase status and allows to
identify the erased block.
‘1’
Program on-going, Erase
on-going on another block or
Erase Complete
DQ
Erase Suspend read on non
Erase Suspend block
1
Reserved
0
Reserved
相關PDF資料
PDF描述
M36W108AT120ZN1T Paired Cable; Number of Conductors:8; Conductor Size AWG:24; No. Strands x Strand Size:Solid; Jacket Material:Polyvinylchloride (PVC); Number of Pairs:4; Leaded Process Compatible:Yes; Conductor Material:Copper; Jacket Color:Orange RoHS Compliant: Yes
M36W108AB120ZN1T Paired Cable; Number of Conductors:8; Conductor Size AWG:24; No. Strands x Strand Size:Solid; Jacket Material:Polyvinylchloride (PVC); Number of Pairs:4; Leaded Process Compatible:Yes; Conductor Material:Copper; Jacket Color:Orange RoHS Compliant: Yes
M36W108T100ZN1T Paired Cable; Number of Conductors:8; Conductor Size AWG:24; No. Strands x Strand Size:Solid; Jacket Material:Polyvinylchloride (PVC); Number of Pairs:4; Leaded Process Compatible:Yes; Jacket Color:Yellow; Outer Diameter:0.200" RoHS Compliant: Yes
M36W108B100ZN1T Paired Cable; Number of Conductors:8; Conductor Size AWG:24; No. Strands x Strand Size:Solid; Jacket Material:Polyvinylchloride (PVC); Number of Pairs:4; Leaded Process Compatible:Yes; Conductor Material:Copper; Jacket Color:Green RoHS Compliant: Yes
M36W108T120ZN1T 8 Mbit 1Mb x8, Boot Block Flash Memory and 1 Mbit 128Kb x8 SRAM Low Voltage Multi-Memory Product
相關代理商/技術參數
參數描述
M36W108AB100ZN5T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit 1Mb x8, Boot Block Flash Memory and 1 Mbit 128Kb x8 SRAM Low Voltage Multi-Memory Product
M36W108AB100ZN6T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit 1Mb x8, Boot Block Flash Memory and 1 Mbit 128Kb x8 SRAM Low Voltage Multi-Memory Product
M36W108AB120ZM1T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit 1Mb x8, Boot Block Flash Memory and 1 Mbit 128Kb x8 SRAM Low Voltage Multi-Memory Product
M36W108AB120ZM5T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit 1Mb x8, Boot Block Flash Memory and 1 Mbit 128Kb x8 SRAM Low Voltage Multi-Memory Product
M36W108AB120ZM6T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit 1Mb x8, Boot Block Flash Memory and 1 Mbit 128Kb x8 SRAM Low Voltage Multi-Memory Product