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參數(shù)資料
| 型號(hào)： | M36W108AT100ZM5T |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 8 Mbit 1Mb x8, Boot Block Flash Memory and 1 Mbit 128Kb x8 SRAM Low Voltage Multi-Memory Product |
| 中文描述： | 8兆1兆× 8，啟動(dòng)塊閃存和1兆位128KB的x8 SRAM的低電壓多媒體存儲(chǔ)產(chǎn)品 |
| 文件頁(yè)數(shù)： | 11/35頁(yè) |
| 文件大?。?/td> | 247K |
| 代理商： | M36W108AT100ZM5T |
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M36W108T, M36W108B
Table 10. Flash Status Register Bits
(1)
Note: 1.
Logic level ‘1’ is High, ‘0’ is Low. -0-1-0-0-0-1-1-1-0- represent bit value in successive Read operations.
DQ
Name
Logic Level
Definition
Note
7
Data
Polling
‘1’
Erase Complete or erase block
in Erase Suspend
Indicates the P/E.C. status, check during
Program or Erase, and on completion before
checking bits DQ5 for Program or Erase
Success.
‘0’
Erase On-going
DQ
Program Complete or data of
non erase block during Erase
Suspend
DQ
Program On-going
6
Toggle Bit
‘-1-0-1-0-1-0-1-’
Erase or Program On-going
Successive reads output complementary
data on DQ6 while Programming or Erase
operations are on-going. DQ6 remains at
constant level when P/E.C. operations are
completed or Erase Suspend is
acknowledged.
DQ
Program Complete
‘-1-1-1-1-1-1-1-’
Erase Complete or Erase
Suspend on currently
addressed block
5
Error Bit
‘1’
Program or Erase Error
This bit is set to ‘1’ in the case of
Programming or Erase failure.
‘0’
Program or Erase On-going
4
Reserved
3
Erase
Time Bit
‘1’
Erase Timeout Period Expired
P/E.C. Erase operation has started. Only
possible command entry is Erase Suspend
(ES).
‘0’
Erase Timeout Period
On-going
An additional block to be erased in parallel
can be entered to the P/E.C.
2
Toggle Bit
‘-1-0-1-0-1-0-1-’
Chip Erase, Erase or Erase
Suspend on the currently
addressed block.
Erase Error due to the
currently addressed block
(when DQ5 = ‘1’)
Indicates the erase status and allows to
identify the erased block.
‘1’
Program on-going, Erase
on-going on another block or
Erase Complete
DQ
Erase Suspend read on non
Erase Suspend block
1
Reserved
0
Reserved
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M36W108AB100ZM5T | 8 Mbit 1Mb x8, Boot Block Flash Memory and 1 Mbit 128Kb x8 SRAM Low Voltage Multi-Memory Product |
| M36W108AT120ZM5T | 8 Mbit 1Mb x8, Boot Block Flash Memory and 1 Mbit 128Kb x8 SRAM Low Voltage Multi-Memory Product |
| M36W108AB120ZM5T | 8 Mbit 1Mb x8, Boot Block Flash Memory and 1 Mbit 128Kb x8 SRAM Low Voltage Multi-Memory Product |
| M36W108T100ZM5T | 8 Mbit 1Mb x8, Boot Block Flash Memory and 1 Mbit 128Kb x8 SRAM Low Voltage Multi-Memory Product |
| M36W108B100ZM5T | 8 Mbit 1Mb x8, Boot Block Flash Memory and 1 Mbit 128Kb x8 SRAM Low Voltage Multi-Memory Product |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M36W108AT100ZM6T | 制造商:STMicroelectronics 功能描述:MIXED MEMORY, FLASH+SRAM, 48 Pin, Plastic, BGA |
| M36W108AT100ZN1T | 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:8 Mbit 1Mb x8, Boot Block Flash Memory and 1 Mbit 128Kb x8 SRAM Low Voltage Multi-Memory Product |
| M36W108AT100ZN5T | 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:8 Mbit 1Mb x8, Boot Block Flash Memory and 1 Mbit 128Kb x8 SRAM Low Voltage Multi-Memory Product |
| M36W108AT100ZN6T | 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:8 Mbit 1Mb x8, Boot Block Flash Memory and 1 Mbit 128Kb x8 SRAM Low Voltage Multi-Memory Product |
| M36W108AT120ZM1T | 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:8 Mbit 1Mb x8, Boot Block Flash Memory and 1 Mbit 128Kb x8 SRAM Low Voltage Multi-Memory Product |
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