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參數(shù)資料
| 型號： | M36W108B120ZM6T |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | Coaxial Cable; Coaxial RG/U Type:6; Impedance:75ohm; Conductor Size AWG:18; No. Strands x Strand Size:Solid; Jacket Material:FEP; Conductor Material:Copper; Jacket Color:Black; Leaded Process Compatible:Yes; Number of Conductors:1 RoHS Compliant: Yes |
| 中文描述： | 8兆1兆× 8，啟動塊閃存和1兆位128KB的x8 SRAM的低電壓多媒體存儲產(chǎn)品 |
| 文件頁數(shù)： | 16/35頁 |
| 文件大?。?/td> | 247K |
| 代理商： | M36W108B120ZM6T |
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M36W108T, M36W108B
16/35
Table 17. Flash Read AC Characteristics
(T
A
= 0 to 70 °C, –20 to 85 °C or –40 to 85 °C; V
CCF
= 2.7V to 3.6V)
Note: 1. Sampled only, not 100% tested.
2. G may be delayed by up to t
ELQV
- t
GLQV
after the falling edge of EF without increasing t
ELQV
.
3. To be considered only if the Reset pulse is given while the memory is in Erase, Erase Suspend or Program Mode.
4. See Flash-SRAM Switching Waveforms.
Symbol
Alt
Parameter
Test Condition
Flash Memory Chip
Unit
100
120
C
L
= 30pF
C
L
= 100pF
Min
Max
Min
Max
t
AVAV
t
RC
Address Valid to Next Address Valid
EF = V
IL
, G = V
IL
100
120
ns
t
AVQV
t
ACC
Address Valid to Output Valid
EF = V
IL
, G = V
IL
100
120
ns
t
ELQX
(1)
t
LZ
Chip Enable Low to Output Transition
G = V
IL
0
0
ns
t
ELQV
(2)
t
CE
Chip Enable Low to Output Valid
G = V
IL
100
120
ns
t
GLQX
(1)
t
OLZ
Output Enabled Low to Output
Transition
EF = V
IL
0
0
ns
t
GLQV
(2)
t
OE
Output Enable Low to Output Valid
EF = V
IL
40
50
ns
t
EHQX
t
OH
Chip Enable High to Output Transition
G = V
IL
0
0
ns
t
EHQZ
(1)
t
HZ
Chip Enable High to Output Hi-Z
G = V
IL
30
30
ns
t
GHQX
t
OH
Output Enable High to Output
Transition
EF = V
IL
0
0
ns
t
GHQZ
(1)
t
DF
Output Enable High to Output Hi-Z
EF = V
IL
30
30
ns
t
AXQX
t
OH
Address Transition to Output Transition
EF = V
IL
, G = V
IL
0
0
ns
t
PLYH
(1,3)
t
RRB
t
READY
RP Low to Read Mode
10
10
μs
t
PHEL
t
RH
RP High to Chip Enable Low
50
50
ns
t
PLPX
t
RP
RP Pulse Width
500
500
ns
t
CCR (4)
Chip Enabled Recovery Time
0
0
ns
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| M36W108B120ZN1T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit 1Mb x8, Boot Block Flash Memory and 1 Mbit 128Kb x8 SRAM Low Voltage Multi-Memory Product |
| M36W108B120ZN5T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit 1Mb x8, Boot Block Flash Memory and 1 Mbit 128Kb x8 SRAM Low Voltage Multi-Memory Product |
| M36W108B120ZN6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit 1Mb x8, Boot Block Flash Memory and 1 Mbit 128Kb x8 SRAM Low Voltage Multi-Memory Product |
| M36W108BZM | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit 1Mb x8, Boot Block Flash Memory and 1 Mbit 128Kb x8 SRAM Low Voltage Multi-Memory Product |
| M36W108BZN | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit 1Mb x8, Boot Block Flash Memory and 1 Mbit 128Kb x8 SRAM Low Voltage Multi-Memory Product |
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